Silicon pixel R&amp;D for the CLIC detector

Hynds, D.

doi:10.22323/1.287.0049

Cited by 1 publication

(1 citation statement)

References 13 publications

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“…comprehensive test beam studies [18] have shown good performance of the sensor, some parameters, e.g., the amplifier peaking time of around 120 ns, do not yet meet the requirements for the CLIC vertex detector. Studies of the impact of misalignment of the two components during fabrication on the total coupling capacitance and the cross coupling between pixels have been performed [19].…”

Section: Jinst 12 C06006mentioning

confidence: 99%

Silicon technologies for the CLIC vertex detector

Spannagel

2017

J. Inst.

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A: CLIC is a proposed linear e + e − collider designed to provide particle collisions at centerof-mass energies of up to 3 TeV. Precise measurements of the properties of the top quark and the Higgs boson, as well as searches for Beyond the Standard Model physics require a highly performant CLIC detector. In particular the vertex detector must provide a single point resolution of only a few micrometers while not exceeding the envisaged material budget of around 0.2% X 0 per layer. Beam-beam interactions and beamstrahlung processes impose an additional requirement on the timestamping capabilities of the vertex detector of about 10 ns. These goals can only be met by using novel techniques in the sensor and ASIC design as well as in the detector construction. The R&D program for the CLIC vertex detector explores various technologies in order to meet these demands. The feasibility of planar sensors with a thickness of 50-150 µm, including different active edge designs, are evaluated using Timepix3 ASICs. First prototypes of the CLICpix readout ASIC, implemented in 65 nm CMOS technology and with a pixel size of 25 × 25 µm 2 , have been produced and tested in particle beams. An updated version of the ASIC with a larger pixel matrix and improved precision of the time-over-threshold and time-of-arrival measurements has been submitted. Different hybridization concepts have been developed for the interconnection between the sensor and readout ASIC, ranging from small-pitch bump bonding of planar sensors to capacitive coupling of active HV-CMOS sensors. Detector simulations based on Geant 4 and TCAD are compared with experimental results to assess and optimize the performance of the various designs. This contribution gives an overview of the R&D program undertaken for the CLIC vertex detector and presents performance measurements of the prototype detectors currently under investigation.

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Section: Jinst 12 C06006mentioning

confidence: 99%

Silicon technologies for the CLIC vertex detector

Spannagel

2017

J. Inst.

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Silicon pixel R&D for the CLIC detector

Cited by 1 publication

References 13 publications

Silicon technologies for the CLIC vertex detector

Silicon technologies for the CLIC vertex detector

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