Silicon oxynitride planar waveguiding structures for application in optical communication

Abstract

The refractive index of silicon oxynitride (SiON), a widely used material for integrated optics devices, can be chosen in a wide range between 1.45-2.0. We describe how the consequent large design freedom can be exploited on the one hand for a "standard" polarization independent optical channel waveguide having a favorable tradeoff between efficient fiberchip coupling and small bend radii (compact devices) and on the other hand for special-purpose and hybrid components where the refractive index should be finely adjusted for obtaining the desired functionality. We illustrate the applicability of SiON by describing a few devices for optical filtering in a new architecture for wavelength multiplexing, modulation, polarization splitting and second-harmonic generation.

Integrated optical components utilizing long-range surface plasmon polaritons

“…All measurements were performed at the wavelength of 1550 nm. We estimated the bend loss using the simple expression [29] Loss (2) and obtained good agreement with the experimental results. The total insertion loss through a 13-mm-long sample, which contained straight waveguides and S-bends, as a function of curvature radius is shown in Fig.…”

Expanding the Silicon Photonics Portfolio With Silicon Nitride Photonic Integrated Circuits

“…Both types of nitride have been used for photonic ICs. In the telecom band around 1.55 µm it is common to use LPCVD nitride to avoid the absorption due to N-H and Si-H bonds around 1.52 µm [42]. To this end the LPCVD nitride is annealed at high temperature to drive out the hydrogen.…”

Silicon Photonics: silicon nitride versus silicon-on-insulator

“…Both types of nitride have been used for photonic ICs. In the telecom band around 1550 nm it is common to use LPCVD nitride to avoid the absorption due to N-H and Si-H bonds around 1520 nm [5]. To this end the LPCVD nitride is annealed at high temperature to drive out the hydrogen.…”