2005
DOI: 10.1016/j.tsf.2005.06.086
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Silicon oxycarbide thin films deposited from viniltrimethoxysilane ion beams

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Cited by 15 publications
(10 citation statements)
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“…The broad but intense absorption at 3150−3650 cm −1 with the maximal absorption at 3421 cm −1 can be attributed to an O−H stretch. These results are completely in agreement with previously reported findings of amorphous silicon oxycarbide thin films and nanotubes [12,[26][27][28].…”
Section: Resultssupporting
confidence: 94%
“…The broad but intense absorption at 3150−3650 cm −1 with the maximal absorption at 3421 cm −1 can be attributed to an O−H stretch. These results are completely in agreement with previously reported findings of amorphous silicon oxycarbide thin films and nanotubes [12,[26][27][28].…”
Section: Resultssupporting
confidence: 94%
“…Therefore, SiCO thin films can be used as antireflection film, window material of silicon-based optoelectronic devices and solar cells [1][2][3][4]. So far, the methods to prepare SiCO include sol-gel, plasma enhanced chemical vapor deposition (PECVD), ion beam synthesis [5][6][7][8][9]. However, the operating temperatures of above techniques are required to high temperature (more than 1000 o C) [6][7][8], which leads to more defects in the interface of thin film and substrate, phase separation and crystallization.…”
Section: Introductionmentioning
confidence: 99%
“…So far, the methods to prepare SiCO include sol-gel, plasma enhanced chemical vapor deposition (PECVD), ion beam synthesis [5][6][7][8][9]. However, the operating temperatures of above techniques are required to high temperature (more than 1000 o C) [6][7][8], which leads to more defects in the interface of thin film and substrate, phase separation and crystallization. Furthermore, the SiCO materials fabricated by chemical means remained a significant organic character which limited their inorganic character and thermal stability [4].…”
Section: Introductionmentioning
confidence: 99%
“…[2][3][4] As kind of Si-based films, silicon oxycarbide (SiC x O 4-x ) thin films probably integrate the excellent characteristics of SiC and SiO x films, such as high hardness, good thermal conductivity and stability, and large band gap. [5][6][7][8] And they may have many potential applications, especially optical applications. As the optical constants are important references for their optical applications, many researchers are interested in the optical study of SiC x O 4-x thin films.…”
Section: Introductionmentioning
confidence: 99%
“…As the optical constants are important references for their optical applications, many researchers are interested in the optical study of SiC x O 4-x thin films. [5][6][7][8] So the method of obtaining the optical constants exactly is very essential.…”
Section: Introductionmentioning
confidence: 99%