Silicon Oxide (SiOx, 0&amp;ltx&amp;lt2): a Challenging Material for Optoelectronics

Tomozeiu, N.

doi:10.5772/20156

Cited by 39 publications

(48 citation statements)

References 31 publications

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“…At low lignin:silica ratios of the three lignin coprecipitates, there is a band at 800 cm -1 characteristic of the pure silica sample, that shifts to 830 cm -1 at higher lignin:silica ratios. Variations of the 850-750 cm -1 band have been correlated to differences in the oxygen content of the samples, with shifts towards larger wavenumber values in case of higher oxygen contents, while its width becomes smaller (Tomozeiu 2011). Accordingly, the surface of the coprecipitate has a different oxygen substitution pattern than that of the silica alone.…”

mentioning

confidence: 98%

Solid-state ²⁹Si NMR and FTIR analyses of lignin-silica coprecipitates

Cabrera

Larsen

et al. 2016

Holzforschung

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When agricultural residues are processed to ethanol, lignin and silica are some of the main byproducts. Separation of these two products is difficult and the chemical interactions between lignin and silica are not well described. In the present study, the effect of lignin-silica complexing has been investigated by characterizing lignin and silica coprecipitates by FTIR and solid state NMR. Silica particles were coprecipitated with three different lignins, three lignin model compounds, and two silanes representing silica-inlignin model compounds. Comparison of 29 Si SP/MAS NMR spectra revealed differences in the distribution of silanol hydroxyl groups among different coprecipitates. These differences are dependent on the lignin type. The results are interpreted that the underlying mechanism of the interactions is the formation of hydrogen bonds between lignin aliphatic hydroxyl or carboxyl groups and the silanols, but not a condensation of the silica-inlignin among the silica particles and not the formation of C-O-Si bonds.

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mentioning

confidence: 98%

Solid-state ²⁹Si NMR and FTIR analyses of lignin-silica coprecipitates

Cabrera

Larsen

et al. 2016

Holzforschung

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“…This phenomenon was already described by Petrik et al [10] and may indicate a slight inhomogeneity in thickness or refractive index or other non-ideality of the layer that are not taken into account by these models. Based on ellipsometry studies of the Si/SiO 2 interfaces [12,14] and on the high value of the extracted refractive index (3.17), the composition of the SiO x interface layer could be roughly estimated to x < 0.4. However, even with a SiO x interface layer, an increase of the extracted Al 2 O 3 refractive index is observed for thickness below 10 nm.…”

Section: Characterization Of Al 2 O 3 Thin Films By Ellipsometrymentioning

confidence: 99%

Al2O3 thin films deposited by thermal atomic layer deposition: Characterization for photovoltaic applications

et al. 2016

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Al 2 O 3 thin films with thickness between 2 and 100 nm were synthetized at 250°C by thermal atomic layer deposition on silicon substrates. Characterizations of as-deposited and annealed layers were carried out using ellipsometry, X-ray reflectivity and X-ray photoelectron spectroscopy. A silicon-rich SiO x layer at the interface between Si and Al 2 O 3 was introduced in the optical models to fit the experimental data. Surface passivation performances of Al 2 O 3 layers deposited on n-type float-zone monocrystalline silicon were investigated as a function of thickness and post-deposition annealing conditions. Surface recombination velocity around 2 cm.s -1 was measured after the activation of the negative charges at the Si/ Al 2 O 3 interface under optimized annealing at 400°C for 10 min. The evolution of the interface layer and of the material properties with the thermal treatment was studied.

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“…From dispersion curves shown in Figure 5 for SiO x films, it is possible to see a relationship between refractive index of the films and their evaporation rates; refraction index increase as evaporation rate increase. Previous works on the synthesis of SiO x films, have shown a direct relation between the stoichiometry x and the refractive index of the films [7]- [10]. Figure 6 shows the refraction index of SiO x films at 633 nm as a function of evaporation rate, when deposited with high vacuum process of about ~10 −6 Torr.…”

Section: Ellipsometry Of Sio X Thin Filmsmentioning

confidence: 99%

“…A. Woollam M-2000 spectroscopic ellipsometer shown in Figure 1, with spectral range from 245 to 1000 nm, at incidence angles of 55˚, 65˚ and 75˚. It is known that SiO x films growth by thermal evaporation have an amorphous random network of tetrahedral coordinated silicon and oxygen and its stoichiometry is a function of the oxygen partial pressure and evaporation rate [10]. In this work, SiO x thin films were deposited in a room temperature substrate (~30˚C), varying the evaporation rate and vacuum pressure of the chamber.…”

Section: Methodsmentioning

confidence: 99%

“…gate dielectric, silicon based light emitters, third generation solar cells, and SOI optical waveguides [1]- [6]. The SiO x is a material that can be fabricated by different techniques, in particular varying deposition conditions as pressure and evaporation rate when using thermal evaporation, silicon suboxide films with variable stoichiometry (SiO x , 1 < x < 2) whose optical properties depend on x value can be obtained [7]- [10]. Structural properties of the silicon oxide films studied by IR absorption and Raman spectra [11] reported that the structure of the films depends significantly on preparation method.…”

Section: Introductionmentioning

confidence: 99%

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Ellipsometric Study of SiOx Thin Films by Thermal Evaporation

Salazar¹,

Soto-Molina²,

Lizárraga-Medina³

et al. 2016

OJIC

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This paper presents a study of amorphous SiO x thin films by means of Variable Angle Spectroscopic Ellipsometry (VASE) technique. Tauc Lorentz, Lorentz and Cauchy models have been used to obtain physical thickness and complex refractive index (n and k) from experimental data. In order to obtain a wide range to x stoichiometry values, the films were prepared by vacuum thermal evaporation of SiO on glass substrates, under different and controlled deposition conditions.

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Silicon Oxide (SiOx, 0&ltx&lt2): a Challenging Material for Optoelectronics

Cited by 39 publications

References 31 publications

Solid-state ²⁹Si NMR and FTIR analyses of lignin-silica coprecipitates

Solid-state ²⁹Si NMR and FTIR analyses of lignin-silica coprecipitates

Al2O3 thin films deposited by thermal atomic layer deposition: Characterization for photovoltaic applications

Ellipsometric Study of SiOx Thin Films by Thermal Evaporation

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Silicon Oxide (SiOx, 0&ltx&lt2): a Challenging Material for Optoelectronics

Cited by 39 publications

References 31 publications

Solid-state 29Si NMR and FTIR analyses of lignin-silica coprecipitates

Solid-state 29Si NMR and FTIR analyses of lignin-silica coprecipitates

Al2O3 thin films deposited by thermal atomic layer deposition: Characterization for photovoltaic applications

Ellipsometric Study of SiOx Thin Films by Thermal Evaporation

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Solid-state ²⁹Si NMR and FTIR analyses of lignin-silica coprecipitates

Solid-state ²⁹Si NMR and FTIR analyses of lignin-silica coprecipitates