Silicon-on-Insulator Structures Produced by Ion-Beam Synthesis and Hydrogen Transfer

Tyschenko, I. E.; Popov, V.

doi:10.1016/b978-0-12-810512-2.00017-2

Cited by 6 publications

(4 citation statements)

References 23 publications

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“…The SOI structures were obtained using a technology similar to SmartCut ® ; but, unlike the latter, our technology consisted in transferring only silicon layers onto preliminary oxidized silicon (Si) wafers under the action of hydrogen [33].…”

Section: Silicon-on-insulator Nanowire (Soi-nw) Sensor Chipsmentioning

confidence: 99%

Nanowire Aptamer-Sensitized Biosensor Chips with Gas Plasma-Treated Surface for the Detection of Hepatitis C Virus Core Antigen

et al. 2020

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Herein, we have demonstrated highly sensitive real-time biospecific detection of a protein marker of hepatitis C—the core antigen of hepatitis C virus (HCVcoreAg)—using a nanowire (NW) biosensor. The primary element of the NW-biosensor is a chip with p-type conductance, bearing silicon-on-insulator (SOI) nanowire structures on its surface. The nanowire structures are fabricated by gas-plasma treatment and electron beam lithography. The detection specificity was provided by sensitization of the sensor surface with aptamers against HCVcoreAg. The influence of buffer pH on the sensor response signal was studied. The effect of reverse polarity of the biosensor response signal with change from the acidic buffer pH to the neutral one was found. The lowest detectable HCVcoreAg concentration was determined to be 2.0 × 10−15 M in both acidic (pH 5.1) and neutral (pH 7.4) buffer solution. The proposed aptamer-sensitized sensor was also successfully applied to detect HCVcoreAg in serum samples of hepatitis C patients.

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Section: Silicon-on-insulator Nanowire (Soi-nw) Sensor Chipsmentioning

confidence: 99%

Nanowire Aptamer-Sensitized Biosensor Chips with Gas Plasma-Treated Surface for the Detection of Hepatitis C Virus Core Antigen

et al. 2020

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“…The aim of this work was the investigation of the electrical properties of both SIS and SFS silicon structures formed by direct bonding and the implanted hydrogen transfer of a silicon layer onto a Si substrate with an FE stack based on HfO 2 /Al 2 O 3 nanolaminates. Inserting highly thermally stable Al 2 O 3 layers increases the thermal stability of the ferroelectric properties of SFS structures during subsequent treatments at the CMOS front-end-of-line (FEOL) fabrication processes instead of the low thermal RTA treatment at 450 °C for 50 s [ 24 ]. The quality of these robust SFS structures with composite ferroelectric layers were characterized by their charge carrier mobility and the density of traps at the interphase boundaries, as well as by determining the current leakage mechanisms in the charge carriers enrichment modes (“direct” branch of the I-V curve), and the depletion mode (“reverse” branch) in the space charge region (SCR).…”

Section: Introductionmentioning

confidence: 99%

Diode-Like Current Leakage and Ferroelectric Switching in Silicon SIS Structures with Hafnia-Alumina Nanolaminates

et al. 2021

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Silicon semiconductor-insulator-semiconductor (SIS) structures with high-k dielectrics are a promising new material for photonic and CMOS integrations. The “diode-like” currents through the symmetric atomic layer deposited (ALD) HfO2/Al2O3/HfO2… nanolayers with a highest rectification coefficient 103 are observed and explained by the asymmetry of the upper and lower heterointerfaces formed by bonding and ALD processes. As a result, different spatial charge regions (SCRs) are formed on both insulator sides. The lowest leakages are observed through the stacks, with total Al2O3 thickness values of 8–10 nm, which also provide a diffusive barrier for hydrogen. The dominant mechanism of electron transport through the built-in insulator at the weak field E < 1 MV/cm is thermionic emission. The Poole-Frenkel (PF) mechanism of emission from traps dominates at larger E values. The charge carriers mobility 100–120 cm2/(V s) and interface states (IFS) density 1.2 × 1011 cm−2 are obtained for the n-p SIS structures with insulator HfO2:Al2O3 (10:1) after rapid thermal annealing (RTA) at 800 °C. The drain current hysteresis of pseudo-metal-oxide-semiconductor field effect transistor (MOSFET) with the memory window 1.2–1.3 V at the gate voltage |Vg| < ±2.5 V is maintained in the RTA treatment at T = 800–900 °C for these transistors.

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“…Микродефекты, образовавшиеся в результате коагуляции точечных дефектов и создающие вокруг себя сильные поля упругих искажений, приводят к возникновению дополнительного изменения свойств кристалла и их существенной локальной неоднородности. В связи с развитием технологии структур кремний на изоляторе, особую актуальность приобрели вопросы, связанные с имплантацией ионов водорода в кристаллы кремния [1,2].…”

Section: Introductionunclassified

Об Изменении Реальной Структуры Кристаллов Кремния, Имплантированных Ионами Водорода, При Их Отжиге По Данным Трехкристальной Рентгеновской Дифрактометрии

Асадчиков¹,

Дьячкова²,

Золотов³

et al. 2019

Физика Твердого Тела

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In this paper, we present the results of a three-crystal X-ray diffractometry (XRD) study of the state of a disturbed layer formed in silicon crystals by implantation of hydrogen ions with energies of 100 + 200 + 300 keV and a total dose of 2 × 10^16 cm^–2 during the subsequent heat exposure in the temperature range from 200 to 1100°C. Here, X-ray studies were performed in the three-crystal XRD scheme when the sample under consideration operates as a second stationary crystal with various fixed angular detuning α from the Bragg position while the third (perfect) crystal-analyzer sweeps the angular distribution of radiation diffracted by the second crystal. Based on a comparison of the shape of diffraction and diffuse maxima for the samples under study, a qualitative conclusion about a significant transformation of radiation defects at post-implantation annealing was derived.

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Silicon-on-Insulator Structures Produced by Ion-Beam Synthesis and Hydrogen Transfer

Cited by 6 publications

References 23 publications

Nanowire Aptamer-Sensitized Biosensor Chips with Gas Plasma-Treated Surface for the Detection of Hepatitis C Virus Core Antigen

Nanowire Aptamer-Sensitized Biosensor Chips with Gas Plasma-Treated Surface for the Detection of Hepatitis C Virus Core Antigen

Diode-Like Current Leakage and Ferroelectric Switching in Silicon SIS Structures with Hafnia-Alumina Nanolaminates

Об Изменении Реальной Структуры Кристаллов Кремния, Имплантированных Ионами Водорода, При Их Отжиге По Данным Трехкристальной Рентгеновской Дифрактометрии

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