Silicon on Insulator Diode Temperature Sensor– A Detailed Analysis for Ultra-High Temperature Operation

Santra, Sumita; Guha, Prasanta Kumar; Ali, Syed Zeeshan; Haneef, Ibraheem; Udrea, F.

doi:10.1109/jsen.2009.2037822

Cited by 41 publications

(26 citation statements)

References 23 publications

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“…S10e – g. The Si NM diode and Mg resistive temperature sensors show sensitivities of −2.23 mV/°C (change in voltage for a given current output) and 0.23%/°C (percentage change in resistance) both of which are consistent with the behavior of conventional, non-transient devices [17]. With current designs and standard measurement systems, changes in temperature of ~0.5 °C can be resolved easily.…”

mentioning

confidence: 81%

A Physically Transient Form of Silicon Electronics

Hwang

Tao

Kim

et al. 2012

Science

1,108

1,249

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A remarkable feature of modern silicon electronics is its ability to remain functionally and physically invariant, almost indefinitely for many practical purposes. Here, we introduce a silicon-based technology that offers the opposite behavior: it gradually vanishes over time, in a well-controlled, programmed manner. Devices that are ‘transient’ in this sense create application possibilities that cannot be addressed with conventional electronics, such as active implants that exist for medically useful timeframes, but then completely dissolve and disappear via resorption by the body. We report a comprehensive set of materials, manufacturing schemes, device components and theoretical design tools for a complementary metal oxide semiconductor (CMOS) electronics of this type, together with four different classes of sensors and actuators in addressable arrays, two options for power supply and a wireless control strategy. A transient silicon device capable of delivering thermal therapy in an implantable mode and its demonstration in animal models illustrate a system-level example of this technology.

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mentioning

confidence: 81%

A Physically Transient Form of Silicon Electronics

Hwang

Tao

Kim

et al. 2012

Science

1,108

1,249

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“…Among all the sensors described above, thermodiodes are one of the most commonly-used temperature sensors. This is mainly because they produce linear output over a wide temperature range [21,22,23], have low power consumption, a small size and high reliability. Most importantly, they can be easily integrated with ICs (integrated circuits) and other sensors.…”

Section: Multi-sensor Chip Designmentioning

confidence: 99%

An SOI CMOS-Based Multi-Sensor MEMS Chip for Fluidic Applications

Mansoor

Haneef

Akhtar

et al. 2016

Sensors

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An SOI CMOS multi-sensor MEMS chip, which can simultaneously measure temperature, pressure and flow rate, has been reported. The multi-sensor chip has been designed keeping in view the requirements of researchers interested in experimental fluid dynamics. The chip contains ten thermodiodes (temperature sensors), a piezoresistive-type pressure sensor and nine hot film-based flow rate sensors fabricated within the oxide layer of the SOI wafers. The silicon dioxide layers with embedded sensors are relieved from the substrate as membranes with the help of a single DRIE step after chip fabrication from a commercial CMOS foundry. Very dense sensor packing per unit area of the chip has been enabled by using technologies/processes like SOI, CMOS and DRIE. Independent apparatuses were used for the characterization of each sensor. With a drive current of 10 µA–0.1 µA, the thermodiodes exhibited sensitivities of 1.41 mV/°C–1.79 mV/°C in the range 20–300 °C. The sensitivity of the pressure sensor was 0.0686 mV/(Vexcit kPa) with a non-linearity of 0.25% between 0 and 69 kPa above ambient pressure. Packaged in a micro-channel, the flow rate sensor has a linearized sensitivity of 17.3 mV/(L/min)−0.1 in the tested range of 0–4.7 L/min. The multi-sensor chip can be used for simultaneous measurement of fluid pressure, temperature and flow rate in fluidic experiments and aerospace/automotive/biomedical/process industries.

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“…When the diode is sufficiently reverse biased (V D /V T 0), one can assume that I D ≈ I S (flowing in the opposite direction). In this case, I D can be approximated by the following semiempirical relationship [11]:…”

Section: Sensor Conceptmentioning

confidence: 99%

An On-Chip Temperature Sensor With a Self-Discharging Diode in 32-nm SOI CMOS

Chowdhury

Hassibi

2012

IEEE Trans. Circuits Syst. II

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We report a 39 μm × 27 μm on-chip temperature sensor which uses the temperature-dependent reverse-bias leakage current of a lateral silicon on insulator (SOI) CMOS p-n diode to monitor the thermal profile of a 32-nm microprocessor core. In this sensor, the diode junction capacitance is first charged to a fixed voltage. Subsequently, the diode capacitance is allowed to self-discharge through its temperature-dependent reverse-bias current. Next, by using a time-to-digital-converter circuit, the discharge voltage is converted to a temperature-dependent time pulse, and finally, its width is measured by using a digital counter. This compact temperature sensor demonstrates a 3σ measurement inaccuracy of ±1.95 • C across the 5 • C-100 • C temperature range while consuming only 100 μW from a single 1.65-V supply.

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Silicon on Insulator Diode Temperature Sensor– A Detailed Analysis for Ultra-High Temperature Operation

Cited by 41 publications

References 23 publications

A Physically Transient Form of Silicon Electronics

A Physically Transient Form of Silicon Electronics

An SOI CMOS-Based Multi-Sensor MEMS Chip for Fluidic Applications

An On-Chip Temperature Sensor With a Self-Discharging Diode in 32-nm SOI CMOS

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