Silicon nitride waveguide coupled 67+ GHz Ge photodiode for non-SOI PIC and ePIC platforms

Integrated PbS Colloidal Quantum Dot Photodiodes on Silicon Nitride Waveguides

“…Most of the photodetectors integrated on SiN waveguides reported in literature were based on bonded or transfer-printed III–V semiconductors, , Ge monolithically grown on Si, , and two-dimensional materials, , approaches that result in increased integration complexity. Integration of evaporated amorphous and polycrystalline photoconductors has also been demonstrated, offering promising pathways for less complex heterogeneous integration.…”

“…49 This demonstrates the flexibility of this on-chip approach and opens up its use in many different applications such as in vivo glucose monitoring 50,51 and fiber Bragg grating readout. 52 ■ DISCUSSION Most of the photodetectors integrated on SiN waveguides reported in literature were based on bonded or transfer-printed III−V semiconductors, 37,53 Ge monolithically grown on Si, 54,55 and two-dimensional materials, 56,57 approaches that result in increased integration complexity. Integration of evaporated amorphous 58 and polycrystalline 59 photoconductors has also been demonstrated, offering promising pathways for less complex heterogeneous integration.…”

Self-Aligned Transparent-Gate ITO/Germanium Nanospheres/SiO2/SiGe-Nanosheets photoMOSFETs on Silicon Nitride Platform

“…In addition to the holy-grail of light sources in Si PICs, highperformance and energy-efficient receiver circuitry is particularly important for Si optical interconnect [1−3]. While high-speed germanium (Ge) PIN photodiodes have been demonstrated on silicon-on-insulator (SOI) [4−6] and Si3N4 platform [7], high dark current and low photoresponsivity remain to be improved. Another technical challenge for Ge photodiodes lies in their large form factor, leading to not only excess energy dissipation due to large parasitic capacitance, but also difficulties in the integration of Ge photodetectors with CMOS amplifiers due to the incompatibility in physical-sizes.…”

Nitride-stressor and quantum-size engineering in Ge quantum-dot photoluminescence wavelength and exciton lifetime

“…Moreover, due to the absence of TPA in Si 3 N 4 , the capability of handling high optical power is superior in comparison to Si waveguides [5][6][7][8]. However, despite all these advantages, there are few reports on Si 3 N 4 -based photonics platforms providing monolithically integrated high-speed modulators [1], fast Si 3 N 4 -waveguided photodetectors [9] and Si 3 N 4 -based light emitters [10,11], and the device performance remains to be improved.…”