Silicon nitride film for solar cells

Amrani, A. El; Menous, I.; Mahiou, L.; Tadjine, R.; Touati, A.; Lefgoum, A.

doi:10.1016/j.renene.2007.12.015

Cited by 56 publications

(25 citation statements)

References 9 publications

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“…4 The rapidly growing photovoltaic industry utilizes thin films of a-SiN x : H to minimize reflection losses of solar cells. 5,6 Thin films of silicon nitride are deposited using different types of chemical-vapor deposition ͑CVD͒ and sputtering. 7,8 The material is nonstoichiometric in general and contains considerable amounts of hydrogen depending on the preparation conditions.…”

Section: Introductionmentioning

confidence: 99%

Atomistic models of hydrogenated amorphous silicon nitride from first principles

et al. 2010

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We present a theoretical study of hydrogenated amorphous silicon nitride ͑a-SiN x :H͒, with equal concentrations of Si and N atoms ͑x =1͒, for two considerably different densities ͑2.0 and 3.0 g / cm 3 ͒. Densities and hydrogen concentration were chosen according to experimental data. Using first-principles molecular-dynamics within density-functional theory the models were generated by cooling from the liquid. Where both models have a short-range order resembling that of crystalline Si 3 N 4 because of their different densities and hydrogen concentrations they show marked differences at longer length scales. The low-density nitride forms a percolating network of voids with the internal surfaces passivated by hydrogen. Although some voids are still present for the high-density nitride, this material has a much denser and uniform space filling. The structure factors reveal some tendency for the nonstoichiometric high-density nitride to phase separate into nitrogen rich and poor areas. For our slowest cooling rate ͑0.023 K/fs͒ we obtain models with a modest number of defect states, where the low ͑high͒ density nitride favors undercoordinated ͑overcoordinated͒ defects. Analysis of the structural defects and electronic density of states shows that there is no direct one-to-one correspondence between the structural defects and states in the gap. There are several structural defects that do not contribute to in-gap states and there are in-gap states that do only have little to no contributions from ͑atoms in͒ structural defects. Finally an estimation of the size and cooling rate effects on the amorphous network is reported.

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Section: Introductionmentioning

confidence: 99%

Atomistic models of hydrogenated amorphous silicon nitride from first principles

et al. 2010

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“…As shown in figure 9, the weighted reflection is of 8.85%. It is lower than that performed by a single layer of optimal SiN (approximately 10%) [24].…”

Section: Emitter Passivation By Sio 2 /Sin Stackmentioning

confidence: 63%

Investigation of rapid thermal oxide/ silicon nitride passivation stack of n+ emitter

Amrani

Kaddour

Maoudj

et al. 2015

Current Applied Physics

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“…A further cleaning step in HF removes the formed phosphorus silicate glass (PSG) layer produced during diffusion. Next, a silicon nitride layer (SiNx) 5 is deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) acting as an anti reflexion and passivation layer on n-type silicon. Metal contacts are screen printed by using metal pastes (see section 2.2 and 2.3).…”

Section: Discussionmentioning

confidence: 99%

Selective Chemical Etching for Studying the Front Side Contact in Thick Film Screen Printed Crystalline P-Type Silicon Solar Cells

Ferrada

Portillo

Cabrera

et al. 2015

J. Chil. Chem. Soc.

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Crystalline silicon solar cells are currently the leading technology in the photovoltaic market with no great expectable change in the shares. The scientific community works on the further development and improvements of state-of-the-art as well as new solar cell materials. This paper reports on a chemical methodology for selective etching to study the metallization step in monocrystalline silicon solar cells. The object of study is a complete processed silicon solar cell which was cleaved via laser beam on the back side and broken per hand to obtain stripes of the size 15.6×1 cm 2 . In the following a sequence of etching chemical solutions to selectively remove the components of the front side silver contact was applied. Scanning electron microscopy was used to investigate contact interface after each etching step. The silver finger, the glass and the silver crystallites grown in silicon could be removed. It came out that the silver crystallites preferably grow at the pyramid tips and edges of the textured wafer. A characterization with Energy Dispersive X-Ray Spectrometry was performed to quantify the components of the silver contact after each chemical etching step. While the weight percentage of silver reduced by more than 90% after an aqua regia treatment, it increased by 13% after hydrofluoric acid. Silver was practically eliminated after a second aqua regia bath. Similarly, the content of glass was also determined. The approach serves for interface investigations in semiconductor technology where screen printing approaches are used for the metallization.

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Silicon nitride film for solar cells

Cited by 56 publications

References 9 publications

Atomistic models of hydrogenated amorphous silicon nitride from first principles

Atomistic models of hydrogenated amorphous silicon nitride from first principles

Investigation of rapid thermal oxide/ silicon nitride passivation stack of n+ emitter

Selective Chemical Etching for Studying the Front Side Contact in Thick Film Screen Printed Crystalline P-Type Silicon Solar Cells

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