Abstract:In this paper, we report a method of increasing the sensitivity of a silicon near-infrared sensor. The sensor is realized by forming multiple trench-type photodiodes in a silicon chip. The trench photodiodes can be formed using conventional semiconductor fabrication equipment. The device structure allows the depletion layer to be spread over the entire sensor chip even at a bias voltage of 10 V or less. The sensor chip can thereby extend the collection area of photoelectrons to the maximum. At a chip thickness… Show more
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.