2011
DOI: 10.1166/mex.2011.1013
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Silicon Nanowire Growth and Properties: A Review

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Cited by 58 publications
(48 citation statements)
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“…Significant progress has been achieved in controlling the morphology, size, composition and doping, on length scales ranging from the atomic regime to larger dimensions. The synthesis of SiNW structures is generally categorized into two distinct but equally important approaches: top‐down and bottom‐up 26, 27. In this section, we focus on the metal‐assisted solution etching as a representative method for the top‐down approach, and the metal‐catalyzed VLS‐growth as a representative method for the bottom up approach, as most of the biological and energy applications discussed later in this review are based on SiNWs formed by these two methods.…”
Section: Sinw Synthesismentioning
confidence: 99%
“…Significant progress has been achieved in controlling the morphology, size, composition and doping, on length scales ranging from the atomic regime to larger dimensions. The synthesis of SiNW structures is generally categorized into two distinct but equally important approaches: top‐down and bottom‐up 26, 27. In this section, we focus on the metal‐assisted solution etching as a representative method for the top‐down approach, and the metal‐catalyzed VLS‐growth as a representative method for the bottom up approach, as most of the biological and energy applications discussed later in this review are based on SiNWs formed by these two methods.…”
Section: Sinw Synthesismentioning
confidence: 99%
“…Nanowires are 1D nanoobjects, with typical diameter in the range of 10–1000 nm and length of several micrometers. Nanowires are often fabricated from a wide range of inorganic crystalline materials . Fabrication of nanowires with tunable dimensions, compositions, structures, and properties is essential for the usage of nanowires in a broad range of research areas .…”
Section: Introductionmentioning
confidence: 99%
“…Some SiNWs applications such as solar cells, sensors, transistors, photodetectors have been reported [1][2][3][4][5].…”
Section: Introductionmentioning
confidence: 99%
“…Several techniques are applied to prepare SiNWs: lithographic methods, laser ablation, various CVD techniques, solution phase synthesis, chemical etching, molecular beam epitaxy, oxide assisted growth method [1][2][3][4][5][6]. Many of them incorporate VLS/VSS (Vapor-Liquid-Solid, Vapor-Solid-Solid) approaches in which nanoscale metal particles serve as initialization/growth agents.…”
Section: Introductionmentioning
confidence: 99%
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