Silicon nanowire grid polarizer for very deep ultraviolet fabricated from a shear-aligned diblock copolymer template

Hong, Young Rae; Asakawa, Koji; Adamson, Douglas H.; Chaikin, P. M.; Register, Richard A.

doi:10.1364/ol.32.003125

Cited by 25 publications

(20 citation statements)

References 12 publications

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“…2, WGPs fabricated from PS/PHMA 47/145 do indeed outperform those previously fabricated from PS/PHMA 22/63. 4 While P is enhanced over the entire range presented ͑ = 190 to 800 nm͒, what is of greatest interest is the improvement of P 193 , which has increased from 38% to 64%-a relative increase of 68%, experimentally confirming that the increased wire height h more than compensates for the increased periodicity d here. With these results in hand, we desired a model that could capture and quantify the effects of d, h, and r on P.…”

Section: Resultsmentioning

confidence: 59%

“…4,5 Our current work employs a cylinder-forming diblock with block molar masses of 47 and 145 kg/mol ͑47/145͒ with d = 53 nm and D = 27 nm. 9 The maximum theoretical wire height that can be produced with these polymers as an etch mask can be easily calculated from…”

Section: Resultsmentioning

confidence: 99%

“…Previously, our group has shown that large-area polarizers with a thickness two orders of magnitude smaller ͑approximately 0.5 mm͒ can be reliably and reproducibly fabricated via block-copolymer nanopatterning. [4][5][6] These thin polarizers have potential application in state-of-the-art photolithography, 6 specifically in the alignment of the birefringent CaF 2 optics used with an ArF excimer laser emitting at 193 nm.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Silicon nanowire polarizers for far ultraviolet (sub-200 nm) applications: Modeling and fabrication

Papalia

Adamson

Chaikin

et al. 2010

Journal of Applied Physics

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We have previously demonstrated a fabrication technique for the creation of silicon wire grid polarizers (WGPs) for far (deep) ultraviolet applications utilizing a shear-aligned cylinder-forming polystyrene-b-poly(n-hexyl methacrylate) diblock copolymer as a mask for reactive ion etching of an amorphous silicon substrate. In our current work, a numerical model is refined and applied to our experimental systems to describe the impact of wire height and periodicity, and tradeoffs between the two, on polarization efficiency. We focus our attention at a wavelength of 193 nm, the emission wavelength of the ArF excimer laser currently in use in advanced photolithographic processes. Through application of the model’s predictions we have achieved marked improvement in the polarization efficiency of our WGPs by increasing the block copolymer molecular weight, thereby increasing the thickness of the Si wires, which compensates for a simultaneous increase in wire periodicity; the resulting arrays of parallel Si nanowires exhibit polarization efficiencies approaching 64% at 193 nm, a 68% relative increase over our previous Si WGPs.

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Section: Resultsmentioning

confidence: 59%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Silicon nanowire polarizers for far ultraviolet (sub-200 nm) applications: Modeling and fabrication

Papalia

Adamson

Chaikin

et al. 2010

Journal of Applied Physics

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“…Thin films containing these microdomain structures can then be used as nanolithographic etch masks to create dot or line patterns on solid surfaces [3][4][5]. Thin films of block copolymers containing aligned in-plane cylindrical microdomains have already demonstrated their usefulness as templates for nanowire grid polarizers [6][7][8]. For many of the applications envisaged for block copolymer nanopatterning, it is important to control the microdomain order-in the case of line patterns, to direct the orientation of the lines and to minimize the topological defects (dislocations) which limit the range of the translational order.…”

Section: Introductionmentioning

confidence: 99%

Orientational order in cylinder-forming block copolymer thin films

Marencic

Chaikin

2012

Phys. Rev. E

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Shear can impart a high degree of orientational order to supported block copolymer thin films containing one or more layers of cylindrical microdomains, leading to a striped pattern with a period of tens of nanometers extending over macroscopic (centimeter-squared) areas. Though the as-deposited films have a polygrain structure, after shearing at sufficiently high stresses the only defects which remain are isolated dislocations, and the orientational order can be quite high (nematic or twofold orientational order parameter >0.99, as measured by tapping-mode atomic force microscopy). The effect of isolated dislocations on orientational order is adequately captured by an isotropic elastic continuum model of the structure surrounding the dislocation, producing a linear decrease of order parameter with dislocation density. Even at zero dislocation density, however, the order parameter does not quite reach unity, due to small-amplitude undulations of the cylinders about their axes which persist in the transverse direction over several cylinder periods.

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“…8 Lamellar and cylindrical phase block copolymer films have been demonstrated as viable templates for microelectronic circuitry and polarizing grids as well. [9][10][11][12][13] For most of these applications, a high degree of long-range order and control over macroscopic patterning is desirable. In practice, this is complicated by the formation of defects and microdomains.…”

Section: Introductionmentioning

confidence: 99%

Substrate curvature governs texture orientation in thin films of smectic block copolymers

et al. 2020

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Self-assembly of ordered nanometer-scale patterns is interesting in itself, but its practical value depends on the ability to predict and control pattern formation. In this paper we demonstrate theoretically and numerically that engineering of extrinsic as well as intrinsic substrate geometry may provide such a controllable ordering mechanism for block copolymers films. We develop an effective two-dimensional model of thin films of striped-phase diblock copolymers on general curved substrates. The model is obtained as an expansion in the film thickness and thus takes the third dimension into account, which crucially allows us to predict the preferred orientations even in the absence of intrinsic curvature. We determine the minimum-energy textures on several curved surfaces and arrive at a general principle for using substrate curvature as an ordering field, namely that the stripes will tend to align along directions of maximal curvature.

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Silicon nanowire grid polarizer for very deep ultraviolet fabricated from a shear-aligned diblock copolymer template

Cited by 25 publications

References 12 publications

Silicon nanowire polarizers for far ultraviolet (sub-200 nm) applications: Modeling and fabrication

Silicon nanowire polarizers for far ultraviolet (sub-200 nm) applications: Modeling and fabrication

Orientational order in cylinder-forming block copolymer thin films

Substrate curvature governs texture orientation in thin films of smectic block copolymers

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