Silicon nanowire detectors showing phototransistive gain

Zhang, Arthur; You, Shuzhen; Soci, Cesare; Liu, Yisi; Wang, Deli; Lo, Yu‐Hwa

doi:10.1063/1.2990639

Cited by 101 publications

(100 citation statements)

References 8 publications

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“…Some reports have pointed out that the persistent photoconductance arise from the defects or charge impurity states inside the bandgap. 33,54,55 Hence, the extra photogenerated carriers in the MoS2 arising from the defects or charge impurity states could be responsible for its slow light response time. Moreover, the CVD MoS2 shows significantly lower stability in ambient, where its PL intensity normally decays in 2 or 3 days.…”

Section: Optical Propertiesmentioning

confidence: 99%

Monolayer MoSe₂ Grown by Chemical Vapor Deposition for Fast Photodetection

et al. 2014

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Monolayer molybdenum disulfide (MoS 2 ) has become a promising building block in optoelectronics for its high photosensitivity. However, sulfur vacancies and other defects significantly affect the electrical and optoelectronic properties of monolayer MoS 2 devices. Here, highly crystalline molybdenum diselenide (MoSe 2 ) monolayers have been successfully synthesized by the chemical vapor deposition (CVD) method. Low-temperature photoluminescence comparison for MoS 2 and MoSe 2 monolayers reveals that the MoSe 2 monolayer shows a much weaker bound exciton peak; hence, the phototransistor based on MoSe 2 presents a much faster response time (<25 ms) than the corresponding 30 s for the CVD MoS 2 monolayer at room temperature in ambient conditions. The images obtained from transmission electron microscopy indicate that the MoSe exhibits fewer defects than MoS 2 . This work provides the fundamental understanding for the differences in optoelectronic behaviors between MoSe 2 and MoS 2 and is useful for guiding future designs in 2D material-based optoelectronic devices.

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Section: Optical Propertiesmentioning

confidence: 99%

Monolayer MoSe₂ Grown by Chemical Vapor Deposition for Fast Photodetection

et al. 2014

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“…It is well known that the photosensitive nature of silicon relies on the photogeneration and instant separation of electron-hole pairs under electrical¯elds. 19,20 In SiNWs under illumination, the photon energy is absorbed and generates electron-hole pairs in the nanowires, which are separated immediately by the applied potential. 21,22 The generated electrons combine with the carrier trap, while the photogenerated holes remain in the nanowires and contribute to an increase in the current.…”

Section: -3mentioning

confidence: 99%

Controlled Synthesis of Horizontal Silicon Nanowires for Biosensor Application

Ahn

Mun

Kulkarni

et al. 2015

NANO

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Top-down silicon nanowire (SiNW) fabrication mechanisms for connecting electrodes are widely utilized because they provide good control of the diameter to length ratio. The representative mechanism for the synthesis of SiNWs, a top-down approach, has limitations on the control of their diameter following lithography technologies, requires a long manufacturing process and is not cost-e®ective. In this study, we have implemented the bottom-up growth of horizontal SiNWs (H-SiNWs) on Si/SiO 2 substrates directly by plasma enhanced chemical vapor deposition (PECVD) under about 400 C. The HAuCl4 solution as a catalyst and SiH 4 gas as a precursor are used for the synthesis of H-SiNWs. After optimization of synthesis conditions, we evaluated the photoelectric properties of the H-SiNWs under illumination with di®erent light intensities. Further, we demonstrated the feasibility of H-SiNW devices for the detection of biotinylated DNA nanostructures and streptavidin interaction.

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“…The following are some examples of NW-based PDs of different materials demonstrated via the direct growth method: NWs of InAs [147], NWs of Si [148]- [152], nanorods of GaN [153], InP NWs/polymer hybrid photodiode [154], InN nanorod/poly(3-hexylthiophene) hybrids [155], NWs of ncCdSe [156], NWs of Ge [157], random network of silicon NWs [158], nanostructured amorphous-silicon (a-Si:H)/polymer hybrid photocells [159], nanopillars of GaInAs/InP [160], NWs of GaAs [161], NWs of GaN [162], NW network of ZnCdSe [163], nanorods of In 2 S 3 [164], GaN NW pin photodiode [165], nanorods of ZnO [166]- [169], silicon NW phototransistor [170], [171], and nanorods array of p-GaN/InGaN/nGaN [172].…”

Section: A Review Of Various Nw Pds 1) Nw Pds Via Direct Growthmentioning

confidence: 99%

A Perspective on Nanowire Photodetectors: Current Status, Future Challenges, and Opportunities

Logeeswaran

Nayak

et al. 2011

IEEE J. Select. Topics Quantum Electron.

140

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Abstract-One-dimensional semiconductor nanostructures (nanowires (NWs), nanotubes, nanopillars, nanorods, etc.) based photodetectors (PDs) have been gaining traction in the research community due to their ease of synthesis and unique optical, mechanical, electrical, and thermal properties. Specifically, the physics and technology of NW PDs offer numerous insights and opportunities for nanoscale optoelectronics, photovoltaics, plasmonics, and emerging negative index metamaterials devices. The successful integration of these NW PDs on CMOS-compatible substrates and various low-cost substrates via direct growth and transfer-printing techniques would further enhance and facilitate the adaptation of this technology module in the semiconductor foundries. In this paper, we review the unique advantages of NW-based PDs, current device integration schemes and practical strategies, recent device demonstrations in lateral and vertical process integration with methods to incorporate NWs in PDs via direct growth (nanoepitaxy) methods and transfer-printing methods, and discuss the numerous technical design challenges. In particular, we present an ultrafast surface-illuminated PD with 11.4-ps full-width at half-maximum (FWHM), edge-illuminated novel waveguide PDs, and some novel concepts of light trapping to provide a full-length discussion on the topics of: 1) low-resistance contact and interfaces for NW integration; 2) high-speed design and impedance matching; and 3) CMOS-compatible massmanufacturable device fabrication. Finally, we offer a brief outlook into the future opportunities of NW PDs for consumer and military application.

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Silicon nanowire detectors showing phototransistive gain

Cited by 101 publications

References 8 publications

Monolayer MoSe₂ Grown by Chemical Vapor Deposition for Fast Photodetection

Monolayer MoSe₂ Grown by Chemical Vapor Deposition for Fast Photodetection

Controlled Synthesis of Horizontal Silicon Nanowires for Biosensor Application

A Perspective on Nanowire Photodetectors: Current Status, Future Challenges, and Opportunities

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Silicon nanowire detectors showing phototransistive gain

Cited by 101 publications

References 8 publications

Monolayer MoSe2 Grown by Chemical Vapor Deposition for Fast Photodetection

Monolayer MoSe2 Grown by Chemical Vapor Deposition for Fast Photodetection

Controlled Synthesis of Horizontal Silicon Nanowires for Biosensor Application

A Perspective on Nanowire Photodetectors: Current Status, Future Challenges, and Opportunities

Contact Info

Product

Resources

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Monolayer MoSe₂ Grown by Chemical Vapor Deposition for Fast Photodetection

Monolayer MoSe₂ Grown by Chemical Vapor Deposition for Fast Photodetection