2012
DOI: 10.1016/j.jpowsour.2012.01.061
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Silicon nanowire anode: Improved battery life with capacity-limited cycling

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Cited by 94 publications
(61 citation statements)
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“…Doped and undoped Si NWs were grown via CVD with an Au catalyst on stainless steel current collectors [260]. The initial capacity exhibited by the undoped NWs was 2,014 mAh·g -1 and retained a capacity of > 1,500 mAh·g -1 after 20 cycles at a C/20 rate.…”
Section: Si Nanostructures: the Effect Of Doping On The Performance Omentioning
confidence: 99%
“…Doped and undoped Si NWs were grown via CVD with an Au catalyst on stainless steel current collectors [260]. The initial capacity exhibited by the undoped NWs was 2,014 mAh·g -1 and retained a capacity of > 1,500 mAh·g -1 after 20 cycles at a C/20 rate.…”
Section: Si Nanostructures: the Effect Of Doping On The Performance Omentioning
confidence: 99%
“…However, only a few papers deal with the influence of the cycling conditions and provide some indications to enhance the capacity retention, for instance by increasing the lower cut-off voltage above 100 mV [13][14][15][16]. Chakrapani et al [17] observed the promising effect of capacity limitation during delithiation process. In conventional carbonates mixture as electrolyte, they obtained up to 200 cycles at 1000 mAh g À1 with a slow rate of C/10.…”
Section: Introductionmentioning
confidence: 99%
“…The low Coulombic efficiency for the first cycle is partially due to SEI formation. Si nanowires grown on a stainless steel substrate showed a first cycle efficiency of 86% (not shown) and a steady state efficiency of 98% for all subsequent cycles [7]. On further cycling, the performance of the Si nanowire/TiN contact improved with second and third cycle efficiencies of 67% and 78%, respectively.…”
Section: Resultsmentioning
confidence: 95%
“…The as-deposited films appeared golden yellow in color. Nominally undoped Si nanowires were grown on top of the TiN film by chemical vapor deposition in a manner similar to that described previously [7,11]. A 5 nm Au film, which served as the catalyst for Si nanowire growth, was deposited on the TiN/W/Ti/Si stack via e-beam evaporation at a pressure less than 10 À7 Torr.…”
Section: Methodsmentioning
confidence: 99%
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