Silicon Nanotubes Fabricated by Wet Chemical Etching of ZnO/Si Core–Shell Nanowires

Sun, Yong-Lie; Zheng, Xiaodong; Jevasuwan, Wipakorn; Fukata, Naoki

doi:10.3390/nano10122535

Cited by 8 publications

(4 citation statements)

References 32 publications

(55 reference statements)

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“…ZnO nanowire cores were synthesized using a hydrothermal growth method as described elsewhere [17]. The ZnO nanowires were then rinsed with deionized water and isopropyl alcohol (IPA) to remove any byproducts.…”

Section: Fabrication Of Zno/ge Core-shell Nanowiresmentioning

confidence: 99%

“…ZnO/Ge heterojunction was also reported to have a high on-state current in tunnel field-effect transistors (TFETs) thanks to its type-II band alignment and a small effective barrier height [16]. Furthermore, by applying the selective wet etching process, the ZnO/Ge core-shell nanowires can be used to fabricate vertically-formed Ge nanotubes with low energy and time consumptions [17]. With the additional inner space, the nanotube structure is expected to accommodate the volume change more effectively [18].…”

Section: Introductionmentioning

confidence: 99%

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ZnO/Ge core–shell nanowires and Ge nanotubes fabricated by chemical vapor deposition and wet etching

Sun¹,

Zheng²,

Jevasuwan³

et al. 2022

Nanotechnology

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One-dimensional germanium (Ge)-related nanostructures including core–shell nanowires and nanotubes with high specific surface area show enhanced performance in energy storage and electronic devices, and their structural control is important for further improving their performance and stability. In this work, we fabricated vertically formed ZnO/Ge core–shell nanowires with different shell thicknesses. The dependence of morphology, crystallinity, and internal stress of the nanowires on the shell growth time and temperature was investigated. By applying the wet-etching method to the ZnO/Ge core–shell heterojunction nanowires, we demonstrated the Ge nanotube fabrication and stress relaxation in Ge after ZnO core removal.

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Section: Fabrication Of Zno/ge Core-shell Nanowiresmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

ZnO/Ge core–shell nanowires and Ge nanotubes fabricated by chemical vapor deposition and wet etching

Sun¹,

Zheng²,

Jevasuwan³

et al. 2022

Nanotechnology

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“…[35], a lowcost fabrication technology of vertically aligned Si NTs via a wet-etching process with controllable NT thickness was demonstrated. Besides thermoelectrics, the applications of Si-based NTs include biosensors, energy storage, photodetectors, optoelectronics and field-effect transistors [35][36][37][38][39].…”

Section: Introductionmentioning

confidence: 99%

“…Moreover, combination of crystalline silicon and amorphous silica layers allows one to study unusual phonon phenomena related to phonon propagation through heterogeneous crystalline/amorphous media [8,28,43,51]. Although Si-based NTs have been intensively studied during recent years [32][33][34][35][36][37][38][39], their thermal properties remain poorly understood.…”

Section: Introductionmentioning

confidence: 99%

Phonons and Thermal Transport in Si/SiO2 Multishell Nanotubes: Atomistic Study

et al. 2021

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Thermal transport in the Si/SiO2 multishell nanotubes is investigated theoretically. The phonon energy spectra are obtained using the atomistic lattice dynamics approach. Thermal conductivity is calculated using the Boltzmann transport equation within the relaxation time approximation. Redistribution of the vibrational spectra in multishell nanotubes leads to a decrease of the phonon group velocity and the thermal conductivity as compared to homogeneous Si nanowires. Phonon scattering on the Si/SiO2 interfaces is another key factor of strong reduction of the thermal conductivity in these structures (down to 0.2 Wm−1K−1 at room temperature). We demonstrate that phonon thermal transport in Si/SiO2 nanotubes can be efficiently suppressed by a proper choice of nanotube geometrical parameters: lateral cross section, thickness and number of shells. We argue that such nanotubes have prospective applications in modern electronics, in cases when low heat conduction is required.

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