The modification of the luminescence of silicon nanocrystals experiencing the effect of a photonic bandgap in a 2D photonic crystal was investigated. The time-integrated photoluminescence spectra detected in the plane of the photonic crystal revealed a dip in the light emission corresponding to the wavelength of the bandgap, whose position changes according to the geometry of the prepatterned pillar array. The calculated emission pattern for a pointlike dipole placed in such a structure suggests an inhibition of the spontaneous emission rate at certain directions as a physical reason for the observed modification of luminescence. © 2007 Optical Society of America OCIS code: 260.3800.The properties of a light emitter can be modified by the properties of the radiation field around it. As a result, it was shown that a photonic crystal could provide ways to manipulate the spontaneous emission rate for an emitter placed into such a structure [1]. In general, the presence of the bandgap in a photonic crystal affects the spontaneous emission rate of an emitter by changing the density of optical modes, which in turn governs the rate of radiative transitions following Fermi's golden rule. Such an inhibition of spontaneous emission and corresponding lifetime increase can be of interest for certain applications when realized in a controllable way. The unwanted radiative recombination channels can be suppressed, thus leading to a redistribution of the light emission into more useful collectable radiative modes [2]. Another example is a photosensitization effect, where the energy is transferred by a near-field mechanism from an entity with a high optical absorption cross section to a less susceptible one, for instance from a quantum dot to a desired atomic species [3]. An increased lifetime of the excitation in a quantum dot can, therefore, enhance the probability of such an energy transfer process. Introducing a defect into a photonic crystal bandgap structure, on the other hand, makes possible the formation of localized standing waves within the photonic lattice. If a pointlike emitter is placed into such a cavity an emitter-cavity interaction can be expected, leading to a shortening of the excitation lifetime [4]. In general, the degree of coupling depends on the proximity of emitter and cavity properties in wavelength and space domains: Q / V, where Q is a quality factor and V is the cavity volume. It was recently shown for direct bandgap nanocrystals that the highest cavity factor of any cavity type could be achieved using such photonic crystal defect structures. In the weak coupling regime, also referred to as the Purcell effect, a nearly 3 orders of magnitude increase in peak maximum intensity was reported [5]. Even a strong coupling regime was demonstrated for such systems, where the energy is continually shifted back and forth between the electromagnetic field in the cavity and the exciton in the nanocrystal, the so-called Rabi oscillations [6].Silicon nanocrystals are particularly interesting for optical applicatio...