Silicon nanocrystallites in buried SiOx layers via direct wafer bonding

Kahler, U.; Hofmeister, H.

doi:10.1063/1.124467

Cited by 37 publications

(26 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…At temperatures lower than 800°C, the SiO x films are amorphous but display a certain amount of partial ordering in the amorphous structure. [28][29][30] We also measured the Raman spectra of the SiO x nanostructured films after annealing. The films show Raman spectra similar to those of as-deposited films, which confirms the amorphous state of the films.…”

Section: Optical Absorption and Photoluminescence Of The Depositedmentioning

confidence: 99%

Optical properties of SiOx nanostructured films by pulsed-laser deposition at different substrate temperatures

Chen

et al. 2004

Journal of Applied Physics

View full text Add to dashboard Cite

Silicon oxide ͑SiO x ͒ nanostructured films have been formed by pulsed-laser deposition of Si in oxygen at different substrate temperatures, in order to study the structures and optical properties related to quantum confinement effects. After laser ablation, the single-crystal Si(100) target is converted to a polycrystal structure and shows weak photoluminescence (PL). The as-deposited SiO x nanostructured films show large particles (i.e., droplets) on a uniform background film. The droplets with weak PL emission have the same high crystallinity as the Si(100) target. Strong PL is observed from the amorphouslike background films rather than from the crystalline droplets. As substrate temperatures increase from room temperature ͑23°C͒ to 800°C, the PL band continually redshifts from 1.9 to 1.6 eV and the optical band gap decreases from 2.9 to 2.1 eV due to the increased Si concentration in the films. After high-vacuum annealing at 800°C, both the PL and optical absorption are enhanced. The optical band gap also decreases after annealing. Combined with the progressive PL redshifts of the SiO x films with increasing Si concentration by plasma-enhanced chemical vapor deposition, the results support the quantum confinement theory.

show abstract

Section: Optical Absorption and Photoluminescence Of The Depositedmentioning

confidence: 99%

Optical properties of SiOx nanostructured films by pulsed-laser deposition at different substrate temperatures

Chen

et al. 2004

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…Furthermore, obvious phase separation and formation of c-Si NCs have been observed by Fourier-transform infrared spectroscopy and TEM at a temperature of 900-1000°C. 7,9,11,12 We studied the phase separation of the SiO x films by thermal annealing in a vacuum. The asdeposited films become darker after annealing with increasing annealing temperature.…”

Section: A Surface Compositionmentioning

confidence: 99%

“…It is well known that hightemperature process will induce the formation of Si NCs in the as-deposited SiO x . 9,10 SiO x starts to separate into more stable SiO 2 phase and Si clusters at the temperature range of 400-700°C through the following equation: 7,11,12 SiO…”

Section: Introductionmentioning

confidence: 99%

“…Thus SiO x is considered to be a practical and promising material for Si-based LEDs. SiO x embedded with Si NCs has been synthesized by several techniques, such as ion implantation of Si + into Si dioxide ͑SiO 2 ͒ films, 5 cosputtering of Si and SiO 2 , 6 evaporation of Si monoxide (SiO), 7 pulsed laser deposition (PLD) of Si in oxygen (O 2 ) gas, 8 and plasmaenhanced chemical vapor deposition (PECVD) of SiO x . 9 The ability to control the size distribution and surface condition of Si NCs with reproducibility is critical due to the sensitive light emitting properties of Si NCs.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Annealing and oxidation of silicon oxide films prepared by plasma-enhanced chemical vapor deposition

Chen

Tang

et al. 2004

Journal of Applied Physics

111

View full text Add to dashboard Cite

We have investigated phase separation, silicon nanocrystal (Si NC) formation and optical properties of Si oxide (SiO x , 0Ͻ x Ͻ 2) films by high-vacuum annealing and dry oxidation. The SiO x films were deposited by plasma-enhanced chemical vapor deposition at different nitrous-oxide/silane flow ratios. The physical and optical properties of the SiO x films were studied as a result of high-vacuum annealing and thermal oxidation. X-ray photoelectron spectroscopy (XPS) reveals that the as-deposited films have a random-bonding or continuous-random-network structure with different oxidation states. After annealing at temperatures above 1000°C, the intermediate Si continuum in XPS spectra (referring to the suboxide) split to Si peaks corresponding to SiO 2 and elemental Si. This change indicates the phase separation of the SiO x into more stable SiO 2 and Si clusters. Raman, high-resolution transmission electron microscopy and optical absorption confirmed the phase separation and the formation of Si NCs in the films. The size of Si NCs increases with increasing Si concentration in the films and increasing annealing temperature. Two photoluminescence (PL) bands were observed in the films after annealing. The ultraviolet (UV)-range PL with a peak fixed at 370-380 nm is independent of Si concentration and annealing temperature, which is a characteristic of defect states. Strong PL in red range shows redshifts from ϳ600 to 900 nm with increasing Si concentration and annealing temperature, which supports the quantum confinement model. After oxidation of the high-temperature annealed films, the UV PL was almost quenched while the red PL shows continuous blueshifts with increasing oxidation time. The different oxidation behaviors further relate the UV PL to the defect states and the red PL to the recombination of quantum-confined excitions.

show abstract

“…To obtain Si nanostructures in the range 1-5 nm a large variety of techniques has been proposed; ion implantation of Si into SiO 2 , [8,9] magnetron sputtering of Si and SiO 2 , [10,11] laser ablation of Si targets, [12] thermal evaporation of SiO, [13,14] plasma-enhanced (PE) CVD, and LPCVD. Most of these methods are not useful for large scale production due to their complexity and time-consuming preparation.…”

Section: Introductionmentioning

confidence: 99%

Controlling the Size and Density of Silicon Nanostructures by Incorporation of Nitrogen

Kiebach

Aceves-Mijares

et al. 2008

Chemical Vapor Deposition

View full text Add to dashboard Cite

Si nanostructures are prepared by thermal annealing of silicon rich oxide (SRO) which is deposited using low pressure (LP) CVD. X-ray diffraction (XRD), Raman spectroscopy, infrared (IR) spectroscopy, and transmission electron microscopy (TEM) are used to characterize the structure of the Si nanocrystals and nanoislands. The density, crystallinity, and size of the Si nanoislands and Si nanocrystals can be controlled by the amount of nitrogen hosted in the SRO. The Si and SiO 2 phase separation of the SRO during the annealing process is hindered by the incorporation of nitrogen.

show abstract

Silicon nanocrystallites in buried SiOx layers via direct wafer bonding

Cited by 37 publications

References 23 publications

Optical properties of SiOx nanostructured films by pulsed-laser deposition at different substrate temperatures

Optical properties of SiOx nanostructured films by pulsed-laser deposition at different substrate temperatures

Annealing and oxidation of silicon oxide films prepared by plasma-enhanced chemical vapor deposition

Controlling the Size and Density of Silicon Nanostructures by Incorporation of Nitrogen

Contact Info

Product

Resources

About