2016
DOI: 10.1016/j.jpowsour.2016.03.053
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Silicon nano-trees as high areal capacity anodes for lithium-ion batteries

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Cited by 38 publications
(33 citation statements)
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“…Leveau et al . designed “nano‐tree” structure through a second growth of secondary nanowires on a Si nanowires electrode via chemical vapor deposition, which showed a capacity maintained above 2 mAh cm −2 after 100 cycles at C/5 . Hu et al .…”
Section: Introductionmentioning
confidence: 99%
“…Leveau et al . designed “nano‐tree” structure through a second growth of secondary nanowires on a Si nanowires electrode via chemical vapor deposition, which showed a capacity maintained above 2 mAh cm −2 after 100 cycles at C/5 . Hu et al .…”
Section: Introductionmentioning
confidence: 99%
“…Thus, inexpensive and industrial acceptable nanostructure preparation methods needs to be developed. [114,115] For example physical methods (such as chemical vapor deposition) provide better control over structure and morphology of nanostructures but at very high cost that limits their extension to EVs. [116,117] In contrast to this, wet chemistry provides low cost synthesis that can be afforded by the road market but results poor control over the structure and composition of nanostructured anode materials.…”
Section: Wileyonlinelibrarycommentioning
confidence: 99%
“…To further improve the silicon mass loading, Leveau et al reported a novel silicon nano-tree structural anode using a two-step CVD process, as shown in Figure 7a. [100] After the first traditional deposition process (Figure 7b), another catalyst layer was evaporated on the as-prepared Si NWs electrode and followed by a second CVD process (Figure 7c). It is worth mentioning that the silicon content of the ultimate electrode is strongly impacted by the thickness of catalyst layer and the growth time of each step.…”
Section: Nanowiresmentioning
confidence: 99%
“…a) Schematic description of the growth process of interconnected SiNWs, Reproduced with permission. [100] Copyright 2016, Elsevier. b) Schematic formation, and c) typical cross-sectional SEM image of Si NWs arrays.…”
Section: Silicon Thin Filmmentioning
confidence: 99%