Silicon Minority-carrier Lifetime Degradation During Molecular Beam Heteroepitaxial III-V Material Growth

Ding, Laura; Zhang, Chaomin; Nærland, Tine Uberg; Faleev, N. N.; Honsberg, Christiana B.; Bertoni, Mariana I.

doi:10.1016/j.egypro.2016.07.027

Cited by 30 publications

(14 citation statements)

References 9 publications

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“…Finally, after rapid annealing at 900 °C, no critical changes of V OC , N s , and μ n are observed (Figure ), whereas the IQE curve exhibits (Figure ) a strong decrease in the long‐wavelength region. This obviously indicates the bulk lifetime degradation in the Si substrate, which is an additional confirmation that such high‐temperature treatments should be avoided, in agreement with results described in previous studies …”

Section: Electrical Properties Of the Gap/si Interfacesupporting

confidence: 91%

“…In particular, heating the Si substrates in the metalorganic vapor phase epitaxy (MOVPE) chamber leads to a significant decrease in the photocarrier lifetime at a depth of more than 20 μm from the surface, which might be related to the effect of low concentrations of fast‐diffusing impurities. Similarly, degradation of the carrier lifetime in Si after annealing in a molecular beam epitaxy (MBE) chamber was also demonstrated …”

Section: Introductionmentioning

confidence: 93%

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Study of GaP Nucleation Layers Grown on Si by Plasma‐Enhanced Atomic Layer Deposition

Gudovskikh

Uvarov

Морозов

et al. 2019

Physica Status Solidi (a)

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The capability of plasma‐enhanced atomic layer deposition (PE‐ALD) for the formation of GaP nucleation layers on Si substrates for further epitaxial growth is explored. The possibility of epitaxial growth of GaP by metalorganic vapor phase epitaxy (MOVPE) on templates prepared by PE‐ALD GaP/Si is demonstrated. The structural and electronic properties of the interfaces between the GaP nucleation layer and the Si substrate as well as their thermal stability are studied. Initially, the GaP/Si structures obtained by PE‐ALD without additional hydrogen plasma exhibit better photoelectric properties compared with that fabricated with high H2 plasma power that induces the formation of defects in the silicon subsurface layer. Annealing at temperatures of 550–600 °C leads to a decrease in the defect concentration created by the hydrogen plasma. Thus, after annealing, the GaP/Si interfaces fabricated by both types of PE‐ALD processes exhibit similar quality. Thermal treatment of the GaP/Si structures at temperatures of 725–750 °C leads to the diffusion of phosphorus from GaP into Si and to the formation of an isotype n‐GaP/n–p‐Si heterojunction with improved photoelectric properties. High‐temperature stability of the GaP/Si interface fabricated by PE‐ALD is essential for its prospective use for GaP/Si templates.

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Section: Electrical Properties Of the Gap/si Interfacesupporting

confidence: 91%

Section: Introductionmentioning

confidence: 93%

Study of GaP Nucleation Layers Grown on Si by Plasma‐Enhanced Atomic Layer Deposition

Gudovskikh

Uvarov

Морозов

et al. 2019

Physica Status Solidi (a)

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“…MBE growth was performed on 270-μm-thick Si wafers with a resistivity of 3 Ω•cm resulting from phosphorous doping at a density of about 5 × 10 15 cm −3 . n+ doping was achieved by phosphorous diffusion in a POCl 3 furnace at 830°C [56] and yielded a sheet resistance of the n+ layer of 30 Ω/sq. GaP of 25 nm with nominal 10 18 cm −3 Si doping was epitaxially grown on the Si at 580°C via MBE with a P/Ga ratio of ∼4.5.…”

Section: A Molecular Beam Epitaxymentioning

confidence: 99%

Study of the Interface in a GaP/Si Heterojunction Solar Cell

Saive

Emmer

Chen

et al. 2018

IEEE J. Photovoltaics

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We have investigated the GaP/Si heterojunction interface for application in silicon heterojunction solar cells. We performed X-ray photoelectron spectroscopy (XPS) on thin layers of GaP grown on Si by metal organic chemical vapor deposition and molecular beam epitaxy. The conduction band offset was determined to be 0.9 ± 0.2 eV, which is significantly higher than predicted by Anderson's rule (0.3 eV). XPS also revealed the presence of Ga-Si bonds at the interface that are likely to be the cause of the observed interface dipole. Via cross-sectional Kelvin probe force microscopy (x-KPFM), we observed a charge transport barrier at the Si/GaP interface which is consistent with the high-conduction band offset determined by XPS and explains the low open-circuit voltage and low fill factor observed in GaP/Si heterojunction solar cells.

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“…A significant lifetime degradation of Si substrates due to high temperature annealing in the MBE chamber was reported in ref. . Also a formation of thin ≈30 nm defective layer in Si near to the GaP interface was detected .…”

Section: Introductionmentioning

confidence: 83%

Interface Properties of GaP/Si Heterojunction Fabricated by PE‐ALD

Gudovskikh

Uvarov

Морозов

et al. 2018

Physica Status Solidi (a)

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The properties of n‐GaP/p‐Si interface as well as their influence on solar cell performance are studied for GaP layers grown by low‐temperature (380 °C) plasma‐enhanced atomic layer deposition (PE‐ALD). The influence of different plasma treatments and RF power values are explored. The increase of RF power leads to a growth transition from amorphous (a‐GaP) to microcrystalline GaP (μc‐GaP) with either amorphous‐GaP/Si or epitaxial‐GaP/Si interface, respectively. However, when continuous hydrogen plasma is used the amorphous‐GaP/Si interface exhibits better photovoltaic performance compared to the epitaxial one. Values of open circuit voltage, Voc = 0.45–0.55 V and internal quantum efficiencies, IQE > 0.9 are obtained for amorphous‐GaP/Si interfaces compared to Voc = 0.25–0.35 V and IQE < 0.45 for epitaxial‐GaP/Si interfaces. According to admittance spectroscopy and TEM studies the near‐surface (30–50 nm) area of the Si substrate is damaged during growth with high RF power of hydrogen plasma. A hole trap at the level of EV + (0.33 ± 0.02) eV is detected by admittance spectroscopy in this damaged Si area. The damage of Si is not observed by TEM when the deposition of the structures with epitaxial‐GaP/Si interface is realized by a modified process without hydrogen plasma indicating that the damage of the near‐surface area of Si is related to hydrogen plasma interaction.

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Silicon Minority-carrier Lifetime Degradation During Molecular Beam Heteroepitaxial III-V Material Growth

Cited by 30 publications

References 9 publications

Study of GaP Nucleation Layers Grown on Si by Plasma‐Enhanced Atomic Layer Deposition

Study of GaP Nucleation Layers Grown on Si by Plasma‐Enhanced Atomic Layer Deposition

Study of the Interface in a GaP/Si Heterojunction Solar Cell

Interface Properties of GaP/Si Heterojunction Fabricated by PE‐ALD

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