1995
DOI: 10.1016/0022-0248(94)00482-x
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Silicon layers on polycrystalline silicon substrates — influence of growth parameters during liquid phase epitaxy

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Cited by 16 publications
(5 citation statements)
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“…Several studies [28,29] give strong support for this view. EBIC-pictures of partially masked structures gave unambiguous evidence of the reduced recombination in the LPE-layers as shown in [28].…”
Section: Liquid Phase Epitaxy-electrodepositionmentioning
confidence: 70%
“…Several studies [28,29] give strong support for this view. EBIC-pictures of partially masked structures gave unambiguous evidence of the reduced recombination in the LPE-layers as shown in [28].…”
Section: Liquid Phase Epitaxy-electrodepositionmentioning
confidence: 70%
“…The supersaturation in the growth regime is low which reduces the defect density and defect activity. Numerous studies (see e.g [4]) give strong support for this view. EBIC-pictures of partially masked structures gave unambiguous evidence of the reduced recombination in the LPE-layers.…”
Section: Deposition Technologymentioning
confidence: 75%
“…Numerous studies [32,33] give strong support for this view. Electron beam induced current (EBIC) pictures of partially masked structures give unambiguous evidence of the reduced recombination in the LPE layers as shown in [32].…”
Section: Liquid Phase Epitaxy -Electrodepositionmentioning
confidence: 76%