Silicon junction field effect transistors at 4.2 K

Nawrocki, Waldemar

doi:10.1016/0011-2275(88)90038-0

Cited by 8 publications

(1 citation statement)

References 5 publications

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“…The optimization of noise in the typical silicon JFET requires elevation of the temperature (above ∼120 K) with some thermal standoff or heater, which can increase stray capacitance at the JFET gate. Custom JFETs which function down to 4 K [28] are not available with the low (< 1 pF) capacitance required for ultra-low noise detector front end electronics. While the transconductances of both JFET and MOSFET improve continually as the temperature is lowered [29], the relatively high minimum operating temperature of JFETs directly support the use of MOSFETs below LN 2 temperatures where HPGe leakage currents may also improve.…”

Section: Cmos Front End Electronicsmentioning

confidence: 99%

Ultra-low noise mechanically cooled germanium detector

Barton

Amman

Martin

et al. 2016

Nuclear Instruments and Methods in Physics Research Section A:

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Low capacitance, large volume, high purity germanium (HPGe) radiation detectors have been successfully employed in lowbackground physics experiments. However, some physical processes may not be detectable with existing detectors whose energy thresholds are limited by electronic noise. In this paper, methods are presented which can lower the electronic noise of these detectors. Through ultra-low vibration mechanical cooling and wire bonding of a CMOS charge sensitive preamplifier to a sub-pF p-type point contact HPGe detector, we demonstrate electronic noise levels below 40 eV-FWHM.

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Section: Cmos Front End Electronicsmentioning

confidence: 99%