Silicon in mechanical sensors

Greenwood, J. C.

doi:10.1088/0022-3735/21/12/001

Cited by 97 publications

(50 citation statements)

References 105 publications

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“…More specifically, considering the Young's moduli, glass and silicon are much stiffer than backsheet and EVA. In fact E G = 73 GPa [14], E Si = 130 GPa [15], and E bs = 2:8 GPa. The value for the backsheet is determined from tensile tests using ASTM D638 TYPE I specimens and a strain velocity of 0.175/min.…”

Section: Materials Properties and Geometrymentioning

confidence: 94%

Thermomechanical deformations in photovoltaic laminates

Paggi

Kajari‐Schröder

Eitner

2011

The Journal of Strain Analysis for Engineering Design

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Recent experimental results based on the digital image correlation technique (U. Eitner, M. Köntges, R. Brendel, Solar Energy Mater. Solar Cells, 2010, 94, 1346-1351 show that the gap between solar cells embedded into a standard photovoltaic laminate varies with temperature. The variation of this gap is an important quantity to assess the integrity of the electric connection between solar cells when exposed to service conditions. In this paper, the thermo-elastic deformations in photovoltaic laminates are analytically investigated by developing different approximate models based on the multilayered beam theory. It is found that the temperature-dependent thermo-elastic properties of the encapsulating polymer layer are responsible for the deviation from linearity experimentally observed in the diagram relating the gap variation to the temperature. The contribution of the different material constituents to the homogenized elastic modulus and thermal expansion coefficient of the composite system is also properly quantified through the definition of weight factors of practical engineering use.

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Section: Materials Properties and Geometrymentioning

confidence: 94%

Thermomechanical deformations in photovoltaic laminates

Paggi

Kajari‐Schröder

Eitner

2011

The Journal of Strain Analysis for Engineering Design

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“…The dimensions of the beam above were measured by calibrated microscope. Silicon (100) cantilever with known Young's modulus E=130GPa [28][29][30] is taken for the calibration. The whole silicon beam is scanned from the root to the free end as shown in Fig.…”

Section: Force Calibrationmentioning

confidence: 99%

<title>MEMS/NEMS mechanical characterization on different thin film materials by scanning along micro-machined cantilevers</title>

Luo

et al. 2005

SPIE Proceedings

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Mechanical characterization is vital for the design of MEMS/NEMS. Many methods have been developed to measure the mechanical properties of materials; however, most of them are either too complicated, or expensive for industrial application, or not accurate. This paper describes a new characterization method to extract the mechanical properties of the materials that is simple, inexpensive and applicable to a wide range of materials. The beams of the material under tests, are patterned by laser micromachining and released by KOH etch. Surface profilometer is used to scan along µ-machined cantilevers and produce a bending profile, from which the Young's modulus can be extracted. The errors due to initial curling and anticlastic (width) effect have been carefully studied. A new ANSYS FEA model is developed to evaluate the effects and test structure designs. SiN x , Ni, SiC and nanocrystal diamond cantilevers have been fabricated and their mechanical properties, e.g. Young's modulus have been evaluated as 154 12GPa, 202 16GPa, 360 50GPa and 504 50GPa, respectively. These results are consistent with those measured by nano-indentation. Residual stress gradient has also been extracted by surface profilometer, which is comparable with the results inferred from Zygo interferometer measurements. It is also possible to extract plate modulus and Poisson ratio with minimal error achieved. This method can be extended to AFM or nanometer-stylus profilometer for NEMS mechanical characterization.

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“…Most theories relating the piezoresistance effect to the mechanical properties of the silicon chip assume that it is made of an isotropic material whereas the silicon chip has actually anisotropic material properties [5]. Inaccurate material property definition plays a crucial role in a proper numerical model of the analyzed sensor package.…”

Section: Materials Properties Of the Silicon Chipmentioning

confidence: 99%

<title>Numerical modeling accuracy assessment and optimization of a piezoresistive silicon pressure sensor</title>

Wymysłowski

2001

SPIE Proceedings

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This paper deals with a numerical modelling and optimization of a piezoresistive silicon pressure sensor with an etched membrane and diffused piezoresistors. The mentioned sensor utilizes resistance changes of piezoresistors placed on the stressed membrane. The stress is induced by the differential pressure applied to the membrane. Presented numerical modelling of the pressure sensor was based on theory of piezoresistivity and finite element modelling (FEM). Theory of piezoresistivity allowed for calculating the resistance changes ofpiezoresistors while FEM allowed for calculating the stress distribution. Applied modelling procedure provided a direct insight into an output signal of the sensor under loading. The main problem of numerical modelling is an accuracy of the achieved results. Because of our reduced knowledge on physical phenomena's, material properties and inherent inaccuracy of numerical methods any engineer should be aware of the limited accuracy of numerical modelling. There are a number of methods that allow at least to assess roughly the error of modelling but there is still a lot of work to do. Therefore it is the rule of thumb that results of modelling should be always verified with the experiment whenever it's possible.

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Silicon in mechanical sensors

Cited by 97 publications

References 105 publications

Thermomechanical deformations in photovoltaic laminates

Thermomechanical deformations in photovoltaic laminates

<title>MEMS/NEMS mechanical characterization on different thin film materials by scanning along micro-machined cantilevers</title>

<title>Numerical modeling accuracy assessment and optimization of a piezoresistive silicon pressure sensor</title>

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