Silicon-Hydrogen Bonds in Silicon Native Oxides Formed during Wet Chemical Treatments

Sugiyama, Kazuhisa; Igarashi, Takayuki; Moriki, Kazunori; Nagasawa, Y.; Aoyama, Takayuki; Sugino, R.; Ito, Takashi; Hattori, Takeo

doi:10.1143/jjap.29.l2401

Cited by 52 publications

(19 citation statements)

References 6 publications

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“…Additionally, the native oxide that forms on an unpassivated Hor Cl-terminated Si(111) surface covers all available oxidation states of Si, from Si(I) to Si(IV), with the majority of the oxide signal appearing as Si(IV) species. 34,[36][37][38] One possible way to understand this set of observations involves the representation of the Si(111) surface shown in Scheme 1, in which the surface-bound carbon atoms are shaded white, the first layer silicon atoms are shaded light gray, the second layer silicon atoms are shaded black, and the rest of the bulk silicon crystal is shaded dark gray. First, the second layer Si atoms (Scheme 1, black atoms) could possibly have the three Si-Si bonds to the first layer oxidized Si atoms (Scheme 1, light gray atoms).…”

Section: Discussionmentioning

confidence: 99%

High-Resolution Soft X-ray Photoelectron Spectroscopic Studies and Scanning Auger Microscopy Studies of the Air Oxidation of Alkylated Silicon(111) Surfaces

et al. 2006

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High-resolution soft X-ray photoelectron spectroscopy was used to investigate the oxidation of alkylated silicon(111) surfaces under ambient conditions. Silicon(111) surfaces were functionalized through a two-step route involving radical chlorination of the H-terminated surface followed by alkylation with alkylmagnesium halide reagents. After 24 h in air, surface species representing Si + , Si 2+ , Si 3+ , and Si 4+ were detected on the Cl-terminated surface, with the highest oxidation state (Si 4+ ) oxide signal appearing at +3.79 eV higher in energy than the bulk Si 2p 3/2 peak. The growth of silicon oxide was accompanied by a reduction in the surface-bound Cl signal. After 48 h of exposure to air, the Cl-terminated Si(111) surface exhibited 3.63 equivalent monolyers (ML) of silicon oxides. In contrast, after exposure to air for 48 h, CH 3 -, C 2 H 5 -, or C 6 H 5 CH 2 -terminated Si surfaces displayed <0.4 ML of surface oxide, and in most cases only displayed ≈0.20 ML of oxide. This oxide was principally composed of Si + and Si 3+ species with peaks centered at +0.8 and +3.2 eV above the bulk Si 2p 3/2 peak, respectively. The silicon 2p SXPS peaks that have previously been assigned to surface Si-C bonds did not change significantly, either in binding energy or in relative intensity, during such air exposure. Use of a high miscut-angle surface (7°vs e0.5°off of the (111) surface orientation) yielded no increase in the rate of oxidation nor change in binding energy of the resultant oxide that formed on the alkylated Si surfaces. Scanning Auger microscopy indicated that the alkylated surfaces formed oxide in isolated, inhomogeneous patches on the surface.

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Section: Discussionmentioning

confidence: 99%

High-Resolution Soft X-ray Photoelectron Spectroscopic Studies and Scanning Auger Microscopy Studies of the Air Oxidation of Alkylated Silicon(111) Surfaces

et al. 2006

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“…By subtracting the reference signal from a measured spectrum, the residual component was deconvoluted to Si 1 +, Si 2 + and Si 3 ÷ signals whose chemical shifts are 0.95, 1.75 and 2.48eV, respectively [7]. If this deconvolution process provides the remaining Si 2 p signal, it could be the photoelectron yield arising from hydrogen related Si bonds [3].…”

Section: Methodsmentioning

confidence: 99%

“…The chemically shifted Si 2 p signal for the SiO 2 /Si system is generally interpreted in terms of suboxides in the interface, while for the chemically grown oxide/Si system the importance of SiHx bonds incorporated in the native oxide has been suggested [3]. It is also shown that the layer-by-layer oxidation proceeds on a hydrogen-terminated Si(100) surface in pure water [4].…”

Section: Introductionmentioning

confidence: 99%

Chemical Structure of Native Oxide Grown on Hydrogenterminated Silicon Surfaces

et al. 1992

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Chemical bonding features and suboxide compositions in native oxide grown on chemically-cleaned hydrogen-terminated Si(100) surfaces stored in pure water have been studied by using surface sensitive infrared spectroscopy and x-ray photoelectron spectroscopy. The LO phonon peak for the native oxide is located at 1210cm-1 , which is shifted to a significantly lower wavenumber side than the ultrathin thermal oxide peak at 1250cm-1 . This is because an appreciable amount of SiHX bonds are incorporated in the native oxide/Si interface and such hydrogen termination in the network dramatically reduces strained bonds in the interface. Very weak Si 2 + suboxide signal from the oxide grown in pure water is also explained by the incorporated SiHx bonds which interrupt the Si 2 ÷ suboxide formation in the interface.

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“…indicated that the Piranha produced silicon oxide is nearly stoichiometric (SiO 2 ), which is different with the RCA cleaning produced oxide. [26][27][28] An optical micrograph of a typical device arrays is shown in Figure 2(a). The device structure with IV characterization scheme is shown in Figure 2(b).…”

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confidence: 99%

Low voltage resistive switching devices based on chemically produced silicon oxide

Jiang

Xia

2013

Applied Physics Letters

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We developed nonvolatile metal/SiOx/Si memristive devices based on ultrathin (∼1 nm) silicon oxide that was produced in a Piranha solution. The devices exhibited repeatable resistive switching behavior with low programming voltages (as low as 0.5 V) and high ON/OFF conductance ratio. Devices with active metals as top electrodes were bipolar switches, while those with inert metal electrodes were unipolar. We also studied the switching mechanisms for both types of devices based on the filament formation and rupture, and proposed conduction models for Pt/SiOx/Si devices.

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Silicon-Hydrogen Bonds in Silicon Native Oxides Formed during Wet Chemical Treatments

Cited by 52 publications

References 6 publications

High-Resolution Soft X-ray Photoelectron Spectroscopic Studies and Scanning Auger Microscopy Studies of the Air Oxidation of Alkylated Silicon(111) Surfaces

High-Resolution Soft X-ray Photoelectron Spectroscopic Studies and Scanning Auger Microscopy Studies of the Air Oxidation of Alkylated Silicon(111) Surfaces

Chemical Structure of Native Oxide Grown on Hydrogenterminated Silicon Surfaces

Low voltage resistive switching devices based on chemically produced silicon oxide

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