Silicon-graphene photonic devices

Abstract

Silicon photonics has attracted much attention because of the advantages of CMOS (complementary-metal-oxide-semiconductor) compatibility, ultra-high integrated density, etc. Great progress has been achieved in the past decades. However, it is still not easy to realize active silicon photonic devices and circuits by utilizing the material system of pure silicon due to the limitation of the intrinsic properties of silicon. Graphene has been regarded as a promising material for optoelectronics due to its unique properties and thus provides a potential option for realizing active photonic integrated devices on silicon. In this paper, we present a review on recent progress of some silicon-graphene photonic devices for photodetection, all-optical modulation, as well as thermal-tuning.

Technologies and applications of silicon-based micro-optical electromechanical systems: A brief review

“…Its mechanical properties are similar to that of single-crystalline Si, and its electrical properties vary greatly according to the film-forming process [23] . Moreover, Si materials can behave like plasmonic metals with a negative real permittivity [25] when they are doped heavily, and realize various active silicon photonics integrated devices by combining with other active materials [26] , making them suitable materials for MOEMS.…”

Interfacial Effect on the Transient Dielectric Function and Charge Transfer in a Monolayer WS2/Si Heterojunction

“…These ultrafast processes would influence the dielectric function of optoelectronic materials and do exist during the operation of silicon photonic devices. 38,39 As we all know, the dielectric function is a fundamental electromagnetic property of one material. The alteration of the dielectric function is pivotal in shaping the performance of silicon photonic devices based on WS 2 .…”

“…Third, the operating frequency of commercial silicon photonic chips can reach up to hundreds of gigahertz. , This is equivalent to the time scale of picosecond, which is already in the range of ultrafast carrier dynamics, such as electron–phonon coupling processes or electron–hole pair recombination. These ultrafast processes would influence the dielectric function of optoelectronic materials and do exist during the operation of silicon photonic devices. , As we all know, the dielectric function is a fundamental electromagnetic property of one material. The alteration of the dielectric function is pivotal in shaping the performance of silicon photonic devices based on WS 2 .…”

X-Ray Diffraction and Raman Spectroscopy Analyses of GaSb-Enriched Si Surface Formed by Applying Diffusion Doping Technique

“…It is well known that silicon tends to be the main semiconductor material most commonly used in the field of electronics. Despite a number of advantages such as the abundance of silicon raw material on earth, the availability of a standard production technology, nevertheless, the main parameters of silicon, such as the band gap, charge carrier mobility, energy band structure, cannot meet the requirements of the current rapidly developing field of electronics [1][2][3]. Therefore, today it is of certain scientific and practical importance to study the effect of binary compounds on the crystal lattice, leading to a substantial alteration in the properties of silicon [4][5].…”