Silicon-Germanium Dioxide and Aluminum Indium Gallium Arsenide-Based Acoustic Optic Modulators

Abstract

<jats:title>Abstract</jats:title><jats:p>The purpose of this study was to clarify the silicon-germanium dioxide (SiGeO2) and Aluminum Indium Gallium Arsenide (AlInGaAs) based acoustic optic modulators for upgrading transmission performance characteristics. The transient time response of these modulators is analyzed and discussed in detail. The 3-dB modulation signal bandwidth, diffraction signal efficiency, signal rise time, and signal quality factor with minimum data error rates are also considered. The proposed models with silicon-germanium dioxide and Aluminum Indium Gallium Arsenide acoustic optic modulators were compared to the previous model with silicon acoustic optic modulators. The results confirmed the high-performance efficiency of the proposed models when compared to the previous model, in both the lowest transient time response and the highest acoustic optic modulators speed response.</jats:p>

BaO–TeO2–MoO3 glass: excellent candidate for acousto-optic modulators with high diffraction efficiency, fast response, and stable operation

“…When the laser transmits through the AO medium, diffraction occurs. [55][56][57] The diffraction efficiency and diffraction angle are both important parameters for evaluating AO devices, which mainly depend on the AO properties of the materials. The diffraction efficiency is defined as Z = I 1 /I 0 , where I 1 is the first-order diffracted light and I 0 is the zero-order diffracted light.…”

Hybrid NRZ/RZ line coding scheme based hybrid FSO/FO dual channel communication systems

“…The propagated optical signals suffer from attenuation and distortion. This distortion leads to spreading and deforming of the optical pulses [31][32][33][34][35][36][37][38][39][40][41][42][43]. The spreading causes the adjacent optical pulses to be overlapped leading to inter symbol interference (ISI) [44][45][46][47][48][49][50][51][52][53][54][55][56][57][58].…”

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“…Однако формулы, которые были выведены в основном для описания роста однокомпонентных кристаллов, в общем случае неприменимы к многокомпонентным системам. В то же время многие из используемых в современных эпитаксиальных технологиях полупроводниковых материалов состоят из нескольких компонентов, например арсениды, нитриды и фосфиды галлия, индия, алюминия [4,5], а также многие соединения группы A 2 B 6 . В процессе эпитаксиального роста каждый из компонентов, входящих в кристалл или пленку, обладает своими собственными индивидуальными свойствами.…”