Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy

Patton, G.L.; Iyer, Subramanian S.; Delage, S.; Tiwari, Sandip; Stork, J.M.C.

doi:10.1109/55.677

Cited by 277 publications

(35 citation statements)

References 11 publications

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“…The average critical strain is found to be about 0.11% using equation (19) and by considering the threshold Ge peak concentration of 6 at% obtained in the present experimental conditions. This average threshold or critical misfit strain may increase if a 78 lower annealing temperature is employed for SPE.…”

Section: Misfit-induced Stacking Fault Generation and Growth Kineticsmentioning

confidence: 65%

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Ion beam synthesis of SiGe alloy layers

1994

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Section: Misfit-induced Stacking Fault Generation and Growth Kineticsmentioning

confidence: 65%

“…They have shown a higher injection of minority carriers and higher emitter efficiency than Si homojunction bipolar transistors. 19 .2°…”

Section: Motivation For Ion Beam Synthesis Of Sige Alloy Layersmentioning

confidence: 98%

Ion beam synthesis of SiGe alloy layers

1994

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“…Up to now mainly epitaxial methods (e.g., chemical vapor deposition, molecular beam epitaxy) are applied in the synthesis of Si 1−x Ge x alloys [1,2]. Ge-ion-implantation into the Si wafer followed by subsequent annealing is an ecient commercial method to synthesize Si 1−x Ge x [37].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Si_1-xGe_xAlloy on Silicon by Ge-Ion-Implantation and Short-Time-Annealing

et al. 2013

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In our contribution we present the fabrication of Si1−xGex alloy by ion-implantation and millisecond ash lamp annealing. The 100 keV Ge ions at the uence of 10 × 10 16 , 5 × 10 16 , and 3 × 10 16 cm −2 were implanted into monocrystalline (100)-oriented Si wafers covered by 50 nm thermal oxide. In the consequence, the 50 nm amorphous Ge rich Si layers were obtained. The recrystallization of the implanted layers and the Si1−xGex alloying were accomplished by ash lamp annealing with the pulse duration of 20 ms. Flash lamp treatment at high energy densities leads to local melting of the Ge-rich silicon layer. Then the recrystallization takes place due to the millisecond range liquid phase epitaxy. Formation of the high quality monocrystalline Si1−xGex layer was conrmed by the µ-Raman spectroscopy, the Rutherford backscattering channeling and cross-sectional transmission electron microscopy investigation. The µ-Raman spectra reveal three phonon modes located at around 293, 404, and 432 cm −1 corresponding to the GeGe, SiGe and SiSi in the Si1−xGex alloy vibrational modes, respectively. Due to much higher carrier mobility in the Si1−xGex layers than in silicon such system can be used for the fabrication of advanced microelectronic devices.

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“…Thanks to the heterojunction effect, thin, heavily doped base can be used to reduce the transit time in the base without compromising the base resistance or the emitter injection efficiency [1], [2]. Over the last ten years, SiGe technology and heterojunction bipolar transistor (HBT) design has progressed considerably, and has reached the point of record cut-off frequencies above 100 GHz [3], [4] and record ECL gate delays down to 11 ps [5], [6].…”

Section: Introductionmentioning

confidence: 99%

Determination of bandgap narrowing and parasitic energy barriers in SiGe HBT's integrated in a bipolar technology

Tron

Hashim

Ashburn

et al. 1997

IEEE Trans. Electron Devices

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Abstract-This paper describes a method for characterizing the bandgap narrowing and parasitic energy barrier in SiGe heterojunction bipolar transistors (HBT's), fabricated using a singlepolysilicon self-aligned bipolar process. From a comprehensive study of the temperature dependence of the collector current, the bandgap narrowing in the base due to germanium has been dissociated from that due to the heavy dopant concentration. The same approach has been used to characterize the height and width of parasitic energy barriers which appear when boron out-diffusion from the SiGe base is present. The method has been applied to SiGe heterojunction bipolar transistors fabricated using a single polysilicon, self aligned, bipolar process, as well as mesa transistors. The experimental results show that small geometry transistors have degraded collector currents due to boron out-diffusion around the perimeter of the emitter. This behavior has been explained by accelerated boron diffusion due to point defect generated during the extrinsic base implant. The values of undoped SiGe spacer thickness needed to suppress the parasitic energy barrier are described. Finally, high-frequency results are reported, which correlate the frequency transition to these parasitic energy barriers.

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Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy

Cited by 277 publications

References 11 publications

Ion beam synthesis of SiGe alloy layers

Ion beam synthesis of SiGe alloy layers

Fabrication of Si_1-xGe_xAlloy on Silicon by Ge-Ion-Implantation and Short-Time-Annealing

Determination of bandgap narrowing and parasitic energy barriers in SiGe HBT's integrated in a bipolar technology

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Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy

Cited by 277 publications

References 11 publications

Ion beam synthesis of SiGe alloy layers

Ion beam synthesis of SiGe alloy layers

Fabrication of Si1-xGexAlloy on Silicon by Ge-Ion-Implantation and Short-Time-Annealing

Determination of bandgap narrowing and parasitic energy barriers in SiGe HBT's integrated in a bipolar technology

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Fabrication of Si_1-xGe_xAlloy on Silicon by Ge-Ion-Implantation and Short-Time-Annealing