Silicon fin line edge roughness determination and sensitivity analysis by Mueller matrix spectroscopic ellipsometry based scatterometry

Dixit, Dhairya; O’Mullane, Samuel; Sunkoju, Sravan; Hosler, Erik R.; Kamineni, V.; Preil, Moshe E.; Keller, Nick; Race, Joseph; Muthinti, Gangadhara Raja; Diebold, Alain C.

doi:10.1117/12.2185543

Cited by 1 publication

(2 citation statements)

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“…It has been previously reported that when LER is incorporated in a scatterometry model, the MM elements significantly change, and the higher the amplitude of the LER, the larger the impact on the MM elements. 15 The changes in the MM elements with respect to increasing LER amplitude could be understood by an increase of the pseudoisotropic character of the sample i.e., the MM elements approached zero as the LER amplitude is increased. For an isotropic sample, the off-diagonal block elements are always zero independent of the wavelength and azimuthal angle.…”

Section: Forward Problem Approach and Sensitivitymentioning

confidence: 99%

“…In addition, it has been reported that the individual response of all the MM elements to change in all these feature parameters such as CD (top), SWA (bottom CD), height of the Si fins, and LER is different. 15 It is important to note that the SiN layer present on the top of Si fins is not incorporated in the models and only one of the parameters in the model is being varied at a time for the sensitivity analysis, as seen in Fig. 4(a).…”

Section: Forward Problem Approach and Sensitivitymentioning

confidence: 99%

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Sensitivity analysis and line edge roughness determination of 28-nm pitch silicon fins using Mueller matrix spectroscopic ellipsometry-based optical critical dimension metrology

Dixit

O’Mullane

Sunkoju

et al. 2015

J. Micro/Nanolith. MEMS MOEMS

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Abstract. Measurement and control of line edge roughness (LER) is one of the most challenging issues facing patterning technology. As the critical dimensions (CDs) of patterned structures decrease, an LER of only a few nanometers negatively impacts device performance. Here, Mueller matrix (MM) spectroscopic ellipsometrybased scatterometry is used to characterize LER in periodic line-space structures in 28-nm pitch Si fin samples fabricated by directed self-assembly patterning. The optical response of the MM elements is influenced by structural parameters like pitch, CDs, height, and side-wall angle, as well as the optical properties of the materials. Evaluation and decoupling MM element response to LER from other structural parameters requires sensitivity analysis using scatterometry models that include LER. Here, an approach is developed that can be used to characterize LER in Si fins by comparing the optical responses generated by systematically varying the grating shape and measurement conditions. Finally, the validity of this approach is established by comparing the results obtained from power spectral density analysis of top down scanning electron microscope images and crosssectional transmission electron microscope image of the 28-nm pitch Si fins. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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Section: Forward Problem Approach and Sensitivitymentioning

confidence: 99%

Section: Forward Problem Approach and Sensitivitymentioning

confidence: 99%