1970
DOI: 10.1109/proc.1970.8048
|View full text |Cite
|
Sign up to set email alerts
|

Silicon etch-refill p+-p-n+ epitaxial X-band IMPATT device

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2018
2018
2018
2018

Publication Types

Select...
1

Relationship

0
1

Authors

Journals

citations
Cited by 1 publication
(1 citation statement)
references
References 7 publications
0
1
0
Order By: Relevance
“…Similarly additive white noise perturbations yield stochastic solutions that tend to Filippov's solution as ε → 0 [16,17]. Near singularities the situation can be more involved -discretizing near grazing points in the presence of a limit cycle leads to micro-chaos [18], and regularisations of two-fold singularities leads to a probabilistic notion of forward evolution [19,20]. In general, away from bifurcation points and determinacy-breaking singularities, the dynamics about a single discontinuity surface is robust to perturbations.…”
Section: Introductionmentioning
confidence: 99%
“…Similarly additive white noise perturbations yield stochastic solutions that tend to Filippov's solution as ε → 0 [16,17]. Near singularities the situation can be more involved -discretizing near grazing points in the presence of a limit cycle leads to micro-chaos [18], and regularisations of two-fold singularities leads to a probabilistic notion of forward evolution [19,20]. In general, away from bifurcation points and determinacy-breaking singularities, the dynamics about a single discontinuity surface is robust to perturbations.…”
Section: Introductionmentioning
confidence: 99%