Silicon doping using disilane in low-pressure OMVPE of GaAs

Shimazu, M.; Kamon, K.; Kimura, Katsutoshi; Mashita, Masao; Mihara, Morihiro; Ishii, Makoto

doi:10.1016/0022-0248(87)90294-6

Cited by 37 publications

(7 citation statements)

References 27 publications

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“…Disilane (Si 2 H 6 ) is much more reactive than SiH 4 and has been used as a source for Si doping of GaAs. The doping behaviour in Si incorporation into GaAs was found to be temperature independent in the range of 600-800 • C [48]. Similar results were reported for Si-doped InGaP [49].…”

Section: N-type Materialssupporting

confidence: 83%

The doping process and dopant characteristics of GaN

Sheu¹,

2002

J. Phys.: Condens. Matter

109

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The characteristic effects of doping with impurities such as Si, Ge, Se, O, Mg, Be, and Zn on the electrical and optical properties of GaN-based materials are reviewed. In addition, the roles of unintentionally introduced impurities, such as C, H, and O, and grown-in defects, such as vacancy and antisite point defects, are also discussed. The doping process during epitaxial growth of GaN, AlGaN, InGaN, and their superlattice structures is described. Doping using the diffusion process and ion implantation techniques is also discussed. A p-n junction formed by Si implantation into p-type GaN is successfully fabricated. The results on crystal structure, electrical resistivity, carrier mobility, and optical spectra obtained by means of x-rays, low-temperature Hall measurements, and photoluminescence are also discussed.

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Section: N-type Materialssupporting

confidence: 83%

The doping process and dopant characteristics of GaN

Sheu¹,

2002

J. Phys.: Condens. Matter

109

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“…Shorter residence times reduce disilane decomposition [220]. Low pressures (1-10 Torr) display thermally activated decomposition with activation energies similar to what had been observed for silane.…”

Section: Siliconsupporting

confidence: 63%

The Science and Practice of Metal-Organic Vapor Phase Epitaxy (MOVPE)

Biefeld

Koleske

Cederberg

2015

Handbook of Crystal Growth

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“…It then saturates with further increases of the disilane flow rates and eventually decreases after it reaches 2.25 × 10 18 cm –3 . Previous studies of Si doped bulk GaAs also found that the carrier density increases linearly up to 3 × 10 18 cm –3 with increasing disilane-to-TMG ratio and the Si atoms are fully ionized as donors . Further increasing the disilane flow rates leads to linearly increased atomic Si concentrations in GaAs while the carrier density tends to saturate.…”

mentioning

confidence: 82%

“…Previous studies of Si doped bulk GaAs also found that the carrier density increases linearly up to 3 × 10 18 cm −3 with increasing disilane-to-TMG ratio and the Si atoms are fully ionized as donors. 45 Further increasing the disilane flow rates leads to linearly increased atomic Si concentrations in GaAs while the carrier density tends to saturate. Such a deviation is caused by the self-compensation mechanism of Si given its amphoteric nature.…”

mentioning

confidence: 99%

Tandem Solar Cells Using GaAs Nanowires on Si: Design, Fabrication, and Observation of Voltage Addition

et al. 2015

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Multijunction solar cells provide us a viable approach to achieve efficiencies higher than the Shockley-Queisser limit. Due to their unique optical, electrical, and crystallographic features, semiconductor nanowires are good candidates to achieve monolithic integration of solar cell materials that are not lattice-matched. Here, we report the first realization of nanowire-on-Si tandem cells with the observation of voltage addition of the GaAs nanowire top cell and the Si bottom cell with an open circuit voltage of 0.956 V and an efficiency of 11.4%. Our simulation showed that the current-matching condition plays an important role in the overall efficiency. Furthermore, we characterized GaAs nanowire arrays grown on lattice-mismatched Si substrates and estimated the carrier density using photoluminescence. A low-resistance connecting junction was obtained using n(+)-GaAs/p(+)-Si heterojunction. Finally, we demonstrated tandem solar cells based on top GaAs nanowire array solar cells grown on bottom planar Si solar cells. The reported nanowire-on-Si tandem cell opens up great opportunities for high-efficiency, low-cost multijunction solar cells.

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Silicon doping using disilane in low-pressure OMVPE of GaAs

Cited by 37 publications

References 27 publications

The doping process and dopant characteristics of GaN

The doping process and dopant characteristics of GaN

The Science and Practice of Metal-Organic Vapor Phase Epitaxy (MOVPE)

Tandem Solar Cells Using GaAs Nanowires on Si: Design, Fabrication, and Observation of Voltage Addition

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