Silicon doping of semipolar (112¯2)Alx

Electrical properties of (11-22) Si:AlGaN layers at high Al contents grown by metal-organic vapor phase epitaxy

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In this work, the growth and conductivity of semipolar AlxGa1-xN:Si with (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) orientation is investigated. AlxGa1-xN:Si (x = 0.60 ± 0.03 and x = 0.80 ± 0.02) layers were grown with different SiH4 partial pressures and the electrical properties were determined using Hall measurements at room temperature.

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“…However, UVC-LEDs on semipolar planes, i.e. (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22), overcome poor LEE through a rotation of the wurtzite unit cell [8]. Furthermore, semipolar MQWs exhibit reduced internal polarization fields, which leads to a high electron and hole wave function overlap and high radiative recombination rate [6,9,10].…”

“…Furthermore, semipolar MQWs exhibit reduced internal polarization fields, which leads to a high electron and hole wave function overlap and high radiative recombination rate [6,9,10]. The (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) orientation can be nucleated on (10-10) m-plane sapphire [11], and has shown success in InGaN devices [12,13]. However, there has only been one report of a UV LED consisting of (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) AlGaN layers, emitting at 307 nm [14] To realize an efficient semipolar UV LED, highly conductive n-doped layers are essential as current is transported laterally from the n-contacts to the pn-junction and high layer resistance leads to current crowding [15].…”

“…The (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) orientation can be nucleated on (10-10) m-plane sapphire [11], and has shown success in InGaN devices [12,13]. However, there has only been one report of a UV LED consisting of (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) AlGaN layers, emitting at 307 nm [14] To realize an efficient semipolar UV LED, highly conductive n-doped layers are essential as current is transported laterally from the n-contacts to the pn-junction and high layer resistance leads to current crowding [15]. However, there is very little literature on Si-doping of (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) AlGaN layers [16,17], especially at higher Al contents.…”

“…However, there is very little literature on Si-doping of (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) AlGaN layers [16,17], especially at higher Al contents. In this work we present the growth of conductive (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) AlGaN:Si on (10-10) m-plane sapphire by metal organic vapor phase epitaxy (MOVPE) at an Al contents of 60% and 80%. Such n-layers would be suitable for the realization of LEDs emitting at 270 nm and 240 nm, respectively [18].…”