Silicon doping of GaAs and AlxGa1−xAs using disilane in metalorganic chemical vapor deposition

Kuech, T. F.; Veuhoff, E.; Meyerson, B.S.

doi:10.1016/0022-0248(84)90396-8

Cited by 107 publications

(23 citation statements)

References 14 publications

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“…The n-type conductivity is conveniently accomplished by doping with Si introduced into the gas stream mostly as silane ( SiH 4 ) 1-4 and occasionally as disilane (Si 2 H 6 ). 5 Doping of the well-explored Al x Ga 1Àx As alloys, 0 < x < 1, by Si 2 H 6 has proven potent in many aspects especially when considering their typical growth temperature range of 500-900 C. 6 Thermodynamic and kinetic aspects of the Si incorporation in the Al x Ga 1Àx As alloys by implementing either SiH 4 or Si 2 H 6 dopant gases have been subjected to close investigation. It has being central to the establishment of their controllable n-type doping.…”

mentioning

confidence: 99%

The complex impact of silicon and oxygen on the n-type conductivity of high-Al-content AlGaN

Kakanakova‐Georgieva

Nilsson

Trinh

et al. 2013

Applied Physics Letters

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Issues of major relevance to the n-type conductivity of Al0.77Ga0.23N associated with Si and O incorporation, their shallow donor or deep donor level behavior, and carrier compensation are elucidated by allying (i) study of Si and O incorporation kinetics at high process temperature and low growth rate, and (ii) electron paramagnetic resonance measurements. The Al0.77Ga0.23N composition correlates to that Al content for which a drastic reduction of the conductivity of AlxGa1−xN is commonly reported. We note the incorporation of carbon, the role of which for the transport properties of AlxGa1−xN has not been widely discussed

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mentioning

confidence: 99%

The complex impact of silicon and oxygen on the n-type conductivity of high-Al-content AlGaN

Kakanakova‐Georgieva

Nilsson

Trinh

et al. 2013

Applied Physics Letters

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“…High-performance deep UV LEDs λ < 280 nm are obtained by MOCVD on high-quality AlN substrates. [66]. Ge is a well-known donor in GaN [67] and has also been demonstrated as dopant for low-Al-content AlGaN [68].…”

Section: Aspects Of the Substrate Selectionmentioning

confidence: 99%

Doping of high-Al-content AlGaN grown by MOCVD

Nilsson¹

2014

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The high-Al-content Al x Ga 1-x N, x > 0.70, is the principal wide-band-gap alloy system to enable the development of light-emitting diodes operating at the short wavelengths in the deep-ultraviolet, λ < 280 nm. The development of the deep-ultraviolet light-emitting diodes (DUV LEDs) is driven by the social and market impact expected from their implementation in portable units for water/surface disinfection and based on the damaging effect of the deep-ultraviolet radiation on the DNA of various microorganisms. Internationally, intense research and technology developments occur in the past few years, yet, the external quantum efficiency of the DUV LEDs is typically below 1%.One of the main material issues in the development of the DUV LEDs is the achievement of n-and ptype high-Al-content Al x Ga 1-x N layers with low resistivity, which is required for the electrical pumping of the diodes. The doping process becomes significantly more complex with increasing the Al content and the electrical resistivity is as high as 10 1 -10 2 Ω . cm for n-type AlN doped by silicon, and 10 7 -10 8 Ω cm for p-type AlN doped by magnesium.The present study was therefore focused on gaining a better understanding of the constraints in the doping process of the high-Al-content Al x Ga 1-x N alloys, involving mainly silicon. For this purpose, the epitaxial growth of the high-Al-content Al x Ga 1-x N and AlN by implementing the distinct hot-wall MOCVD was developed in order to achieve layers of good structural and morphological properties, and with low content of residual impurities, particularly oxygen and carbon. Substitutional point defects O N and C N may have a profound impact on the doping by their involvement in effects of ntype carrier compensation. The process temperature was varied between 1000 and up to 1400 °C, which is a principal advantage in order to optimize the material properties of the high-Al-content Al x Ga 1-x N and AlN. The epitaxial growth of the high-Al-content Al x Ga 1-x N and AlN was largely performed on 4H-SiC substrates motivated by (i) the lattice mismatch of ~ 1% along the basal plane (the smallest among other available substrates including Si and sapphire), (ii) the good thermal conductivity of 3.7 W cm -1 K -1 , which is essential to minimize the self-heating during the operation of any light-emitting diode, and (iii) the limited access to true-bulk AlN wafers. The outcome of this study is accordingly summarized and presents our understanding for (i) the complex impact of silicon and oxygen on the n-type conductivity of Al 0.77 Ga 0.23 N, representative for the alloy composition at which a drastic reduction of the n-type conductivity of Al x Ga 1-x N is commonly reported (paper 1); (ii) the strain and morphology compliance during the intentional iv doping by silicon and magnesium, and its correlation with the resistivity of highly doped layers of Al 0.82 Ga 0.18 N alloy composition (paper2); (iii) the n-type conductivity of highly Si-doped Al 0.72 Ga 0.28 N as bound by the process temperature (p...

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“…undesired phenomenon in silicon doping of GaAs In fig. 6 the silicon deposition rate R5~is using SiH4 and Si2H6 [1,7,11,12,14,16,26,27].…”

Section: _____________ ______mentioning

confidence: 99%

Pressure and temperature dependence of silicon doping of GaAs using Si2H6 in metalorganic chemical vapour deposition

Hageman

Croon

Reek

et al. 1992

Journal of Crystal Growth

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Silicon doping of GaAs and AlxGa1−xAs using disilane in metalorganic chemical vapor deposition

Cited by 107 publications

References 14 publications

The complex impact of silicon and oxygen on the n-type conductivity of high-Al-content AlGaN

The complex impact of silicon and oxygen on the n-type conductivity of high-Al-content AlGaN

Doping of high-Al-content AlGaN grown by MOCVD

Pressure and temperature dependence of silicon doping of GaAs using Si2H6 in metalorganic chemical vapour deposition

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