Silicon doping by nuclear transmutation

Haas, W.; Schnöller, M.

doi:10.1007/bf02652886

Cited by 34 publications

(5 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Using the detector in a high thermal neutron flux will cause there to be a more rapid degradation. These effects have not been analysed in this study [7,8].…”

Section: Detector Degradation By Nuclear Transmutationmentioning

confidence: 98%

Simulation of a silicon neutron detector coated with TiB₂absorber

et al. 2012

View full text Add to dashboard Cite

Neutron radiation cannot be directly detected in semiconductor detectors and therefore needs converter layers. Planar clean-room processing can be used in the manufacturing process of semiconductor detectors with metal layers to produce a cost-effective device. We used the Geant4 Monte-Carlo toolkit to simulate the performance of a semiconductor neutron detector. A silicon photo-diode was coated with vapour deposited titanium, aluminium thin films and a titaniumdiboride (TiB 2 ) neutron absorber layer. The neutron capture reaction 10B(n, alpha)7Li is taken advantage of to create charged particles that can be counted. Boron-10 has a natural abundance of about 19.8 %. The emitted alpha particles are absorbed in the underlying silicon detector. We varied the thickness of the converter layer and ran the simulation with a thermal neutron source in order to find the best efficiency of the TiB 2 converter layer and optimize the clean room process. KEYWORDS: Solid state detectors; Neutron detectors (cold, thermal, fast neutrons); Detector modelling and simulations I (interaction of radiation with matter, interaction of photons with matter, interaction of hadrons with matter, etc)

show abstract

“…Using the detector in a high thermal neutron flux will cause there to be a more rapid degradation. These effects have not been analysed in this study [7,8].…”

Section: Detector Degradation By Nuclear Transmutationmentioning

confidence: 98%

Simulation of a silicon neutron detector coated with TiB₂absorber

et al. 2012

View full text Add to dashboard Cite

show abstract

“…Оскільки, як показав експеримент [22], трансмутаційно леговані кристали відрізняються від звичайних кристалів, вирощених методом Чохральського та легованих домішкою фосфору через розплав, підвищеною гомогенністю в розподілі легуючої домішки за об'ємом кристала, то виникало питання, чи знаходять свій прояв у трансмутаційно легованих кристалах Si подібні переваги ( в порівнянні зі звичайними кристалами) і тоді, коли в якості пробних будуть використані явища, пов'язані з розсіянням фононів, а не електронів. Такий методологічний підхід ( у разі його дієвості) буде еквівалентним, в принципі, розширенню можливостей методики, оскільки де-бройлівська довжина хвиль фононів задовольняє нерівності λ ф << λ е .…”

Section: вступunclassified

Effect of Thermal Annealings and Cooling Methods on Electrophysical Parameters of n Si Doped with Phosphorus Impurity Via the Melt and by Nuclear Transmutation Technique

Гайдар

2018

PCSS

View full text Add to dashboard Cite

The effect of the different regimes of heat treatment on the kinetics of electronic processes in silicon crystals doped with phosphorus impurity via the melt and by nuclear transmutation technique. The most significant influence of cooling under intermediate value of cooling rate (υ cl ≈ 15 о С/min) after high-temperature annealing on the main electrophysical parameters of the transmutation-doped n-Si 〈P〉 crystals was established. Features of changes of the anisotropy parameters of mobility and thermal electromotive force measured on silicon crystals of different doping techniques both in the initial state, and after high-temperature annealing when using different cooling rates, were found and explained.

show abstract

“…One of the fundamentally important ways to improve the quality of semiconductor crystals is the development and practical application of doping methods that could provide the homogeneous distribution of dopants by volume while keeping the structural perfection of crystal. In this connection, use of the material doped by the method of nuclear transmutation under irradiation of silicon by the flux of thermal neutron is of great interest .…”

Section: Introductionmentioning

confidence: 99%

Optimization of the thermoelectric figure of merit in the transmutation‐doped and ordinary n‐Si crystals

Гайдар

Баранский

2015

Physica Status Solidi (a)

View full text Add to dashboard Cite

Phone: þ380 445 255 959, Fax: þ380 445 258 342The fundamental differences between the transmutation-doped and ordinary (doped by phosphorus through the melt when grown) n-Si crystals were shown on the base of the analysis of the experimental data. It was established that in a transmutation-doped n-Si crystal the anisotropy parameter of thermoelectromotive force (thermo-emf) of electron-phonon drag (M ¼ a ph jj =a ph ? ) increases with rising of the annealing temperature due to the increase of the longitudinal phonon component of thermo-emf (a ph jj ) with simultaneous reducing of the transverse component (a ph ? ). The effect of negative tensoresistance in the transmutation-doped n-Si crystals was found. The ways to optimize the thermoelectric figure of merit in ordinary and transmutation-doped n-Si crystals, which can be useful for practical utilization, were proposed.

show abstract

Silicon doping by nuclear transmutation

Cited by 34 publications

References 3 publications

Simulation of a silicon neutron detector coated with TiB₂absorber

Simulation of a silicon neutron detector coated with TiB₂absorber

Effect of Thermal Annealings and Cooling Methods on Electrophysical Parameters of n Si Doped with Phosphorus Impurity Via the Melt and by Nuclear Transmutation Technique

Optimization of the thermoelectric figure of merit in the transmutation‐doped and ordinary n‐Si crystals

Contact Info

Product

Resources

About

Silicon doping by nuclear transmutation

Cited by 34 publications

References 3 publications

Simulation of a silicon neutron detector coated with TiB2absorber

Simulation of a silicon neutron detector coated with TiB2absorber

Effect of Thermal Annealings and Cooling Methods on Electrophysical Parameters of n Si Doped with Phosphorus Impurity Via the Melt and by Nuclear Transmutation Technique

Optimization of the thermoelectric figure of merit in the transmutation‐doped and ordinary n‐Si crystals

Contact Info

Product

Resources

About

Simulation of a silicon neutron detector coated with TiB₂absorber

Simulation of a silicon neutron detector coated with TiB₂absorber