Silicon dioxide thin film luminescence in comparison with bulk silica

Trukhin, A.N.; Goldberg, Michael J.; Jansons, J.; Fitting, H.‐J.; Tāle, I.

doi:10.1016/s0022-3093(97)00437-7

Cited by 68 publications

(70 citation statements)

References 10 publications

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“…The multisite origin for emission is also witnessed in the decrease of emission band width [42] with increasing excitation wavelength. Similar blue-green emission has previously been observed for other silicates such as fluorohectorite [23], chlorohectorite [24], montmorillonite [43], kaolinite [44], pyrophyllite [45], topaz (Al2SiO4(F,OH)2) [46], synthetic hackmanite (Na8Al6Si6O24(Cl,S)2) [47,48], benitoite (BaTiSi3O9) [49], and SiO2 [50,51]. The literature presents mainly two different explanations for the origin of this blue-green emission.…”

Section: Appl Sci 2017 7 1243supporting

confidence: 73%

“…The literature presents mainly two different explanations for the origin of this blue-green emission. One proposition categorizes this emission as photoelectric response as well as inner center and recombination type of luminescence [52], attributing the blue emission to Similar blue-green emission has previously been observed for other silicates such as fluorohectorite [23], chlorohectorite [24], montmorillonite [43], kaolinite [44], pyrophyllite [45] [50,51]. The literature presents mainly two different explanations for the origin of this blue-green emission.…”

Section: Appl Sci 2017 7 1243mentioning

confidence: 95%

“…The literature presents mainly two different explanations for the origin of this blue-green emission. One proposition categorizes this emission as photoelectric response as well as inner center and recombination type of luminescence [52], attributing the blue emission to triplet-singlet transition in twofold coordinated Si centers [53], due to oxygen deficit and irradiation effects [50]. The second proposition associates the emission with luminescent centers containing trivalent titanium paired with an oxide vacancy, which may exist either as matrix element or as an impurity [23,24,[46][47][48][49].…”

Section: Appl Sci 2017 7 1243mentioning

confidence: 99%

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Synthesis and Features of Luminescent Bromo- and Iodohectorite Nanoclay Materials

et al. 2017

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Abstract:The smectites represent a versatile class of clay minerals with broad usage in industrial applications, e.g., cosmetics, drug delivery, bioimaging, etc. Synthetic hectorite Na 0.7 (Mg 5.5 Li 0.3 ) [Si 8 O 20 ](OH) 4 is a distinct material from this class due to its low-cost production method that allows to design its structure to match better the applications. In the current work, we have synthesized for the first time ever nanoclay materials based on the hectorite structure but with the hydroxyl groups (OH − ) replaced by Br − or I − , yielding bromohectorite (Br-Hec) and iodohectorite (I-Hec). It was aimed that these materials would be used as phosphors. Thus, OH − replacement was done to avoid luminescence quenching by multiphonon de-excitation. The crystal structure is similar to nanocrystalline fluorohectorite, having the d 001 spacing of 14.30 Å and 3 nm crystallite size along the 00l direction. The synthetic materials studied here show strong potential to act as host lattices for optically active species, possessing mesoporous structure with high specific surface area (385 and 363 m 2 g −1 for Br-Hec and I-Hec, respectively) and good thermal stability up to 800 • C. Both materials also present strong blue-green emission under UV radiation and short persistent luminescence (ca. 5 s). The luminescence features are attributed to Ti 3+ /Ti IV impurities acting as the emitting center in these materials.

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Section: Appl Sci 2017 7 1243supporting

confidence: 73%

Section: Appl Sci 2017 7 1243mentioning

confidence: 95%

“…The literature presents mainly two different explanations for the origin of this blue-green emission. One proposition categorizes this emission as photoelectric response as well as inner center and recombination type of luminescence [52], attributing the blue emission to triplet-singlet transition in twofold coordinated Si centers [53], due to oxygen deficit and irradiation effects [50]. The second proposition associates the emission with luminescent centers containing trivalent titanium paired with an oxide vacancy, which may exist either as matrix element or as an impurity [23,24,[46][47][48][49].…”

Section: Appl Sci 2017 7 1243mentioning

confidence: 99%

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Synthesis and Features of Luminescent Bromo- and Iodohectorite Nanoclay Materials

et al. 2017

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“…The components may be ascribed to the photoluminescence of self-trapping excitons [11][12][13], silica point defects or impurity-related centers [8,14]. Contrary, the violet band has truly Gaussian profile.…”

Section: Resultsmentioning

confidence: 99%

Photoluminescence of Se-related oxygen deficient center in ion-implanted silica films

Zatsepin

Бунтов

Пустоваров

et al. 2013

Journal of Luminescence

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a b s t r a c tThe results of low-temperature time-resolved photoluminescence (PL) investigation of thin SiO 2 films implanted with Se + ions are presented. The films demonstrate an intensive PL band in the violet spectral region, which is attributed to the triplet luminescence of a new variant of selenium-related oxygen deficient center (ODC). The main peculiarity of the defect energy structure is the inefficient direct optical excitation. Comparison with spectral characteristics of isoelectronic Si-, Ge-and SnODCs show that the difference in electronic properties of the new center is related to ion size factor. It was established that the dominating triplet PL excitation under VUV light irradiation is related to the energy transfer from SiO 2 excitons. A possible model of Se-related ODC is considered.

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“…At low temperatures a green-yellow luminescence band G (540 nm, 2.3 eV) is observed in the first few seconds of irradiation and had been attributed to the self-trapped exciton (STE) [7]. Moreover, a yellow band Y (560 nm, 2.2 eV) appears after long time of irradiation, i. e. after doses of 2 A·s/cm 2 [8].…”

Section: Introductionmentioning

confidence: 99%

Multimodal luminescence spectra of ion-implanted silica

2007

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Main luminescence bands in silica SiO 2 are the red luminescence R (650 nm, 1.9 eV) of the non-bridging oxygen hole center, the blue band B (460 nm, 2.7 eV) and the altraviolet luminescence UV (290 nm, 4.3 eV) both related commonly to oxygen deficient centers. In the present work we will enhance or replace either the first or second constituent of SiO 2 , i. e. silicon or oxygen, isoelectronically by additional implantation of respective ions. Thus thermally oxidized SiO 2 layers have been implanted by different ions of the IV group (C, Si, Ge, Sn, Pb) and of the VI group (O, S, Se) with doses up to 5 · 10 16 cm −2 leading to an atomic dopant fraction of about 4 at% at the half depth of the SiO 2 layers. Very surprisingly, the cathodoluminescence spectra of oxygen and sulfur implanted SiO 2 layers show besides characteristic bands a sharp and intensive multimodal structure beginning it the green region at 500 nm up to the near infrared. The energy step differences of the sublevels amount in average 120 meV and indicate vibration associated electronic states, probably of O − 2 interstitial molecules.

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Silicon dioxide thin film luminescence in comparison with bulk silica

Cited by 68 publications

References 10 publications

Synthesis and Features of Luminescent Bromo- and Iodohectorite Nanoclay Materials

Synthesis and Features of Luminescent Bromo- and Iodohectorite Nanoclay Materials

Photoluminescence of Se-related oxygen deficient center in ion-implanted silica films

Multimodal luminescence spectra of ion-implanted silica

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