Silicon Dioxide Deposition by Atmospheric Pressure and Low‐Temperature CVD Using TEOS and Ozone

Fujino, K.; Nishimoto, Yuko; Tokumasu, N.; Maeda, Kazuo

doi:10.1149/1.2087093

Cited by 133 publications

(65 citation statements)

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“…The hotplate bake prior to diffusion serves to drive off the ethanol solvent leaving a glassy film of P205, H2O and TEOS. At diffusion temperatures above about 700 "C, TEOS reacts to form SiO2, H20 and CZH4 [6,7]. It is well known that P205 is extremely hygroscopic [a], and will react with H20 intentionally added to the SOD film, as well as with humidity in the laboratory environment and trace amounts of moisture in the process gasses, to form the volatile species H3P04 (phosphoric acid), which has a boiling point of about 400 "C. It is assumed that this is the phosphorus containing species that is transported from the source to the sample wafer.…”

Section: Ill-c Proposed Model For Doss Diffusionmentioning

confidence: 99%

Simultaneous P and B diffusion, in-situ surface passivation, impurity filtering and gettering for high-efficiency silicon solar cells

Krygowski

Rohaigi²,

Ruby³

Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997

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A technique is presented to simultaneously diffuse boron and phosphorus in silicon, and grow an insitu passivating oxide in a single furnace step. It is shown that limited solid doping sources made from P and B Spin-On Dopant (SOD) films can produce optimal n+ and p' profiles simultaneously without the deleterious effects of cross doping. A high quality passivating oxide is grown in-situ beneath the thin (-60 A) diffusion lass, resulting in low J, values below 100 fNcm for transparent (-100 W o ) phosphorus and boron diffusions. For the first time it is shown that impurities present in the boron SOD film can be effectively filtered out by employing separate source wafers, resulting in bulk lifetimes in excess of 1 ms for the sample wafers. The degree of lifetime degradation in the sources is related to the gettering efficiency of boron in silicon. This novel simultaneous diffusion, in-situ oxidation, impurity filtering and gettering technique was successfully used to produce 20.3% Fz, and 19.1% Cz solar cells, in one furnace step. 9

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Section: Ill-c Proposed Model For Doss Diffusionmentioning

confidence: 99%

Simultaneous P and B diffusion, in-situ surface passivation, impurity filtering and gettering for high-efficiency silicon solar cells

Krygowski

Rohaigi²,

Ruby³

Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997

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“…As a result, BSF formation can be accomplished very quickly (within seconds or minutes) and at moderate temperatures (<900"C). This provides a distinct advantage over, for example, a deep p+ boron BSF that requires a lengthy (= 1 hour), hightemperature (= 1000"C) difision step in order to achieve low S.fl [9,10].…”

Section: Treatmentmentioning

confidence: 99%

“…The hotplate bake prior to diffhsion serves to drive off the ethanol solvent leaving a glassy phosphosilicate film (PSG). As temperatures are increased toward the target difision temperature (900-1000 "C), the PSG film polymerizes to form Si02, H20 and C2N [9,10]. It is well known that P205 is extremely hydroscopic, and will react with H20 in the SOD film, as well as with trace amounts of moisture in the process gasses, to form the volatile species HsP04 @hosphoric acid), which is weakly bonded to the PSG structure.…”

Section: Proposed Modelmentioning

confidence: 99%

Fundamental Understanding and Development of Low-Cost, High-Efficiency Silicon Solar Cells: Annual Progress Report: Sept. 1997-Aug. 1998

Doshi¹,

Ebong²,

Kamra³

et al. 1999

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“…The alkoxysilane are usually used are tetramethoxysilane Si(OMe) 4 , more usually know as TMOS and tetraethoxysilane, Si(OEt) 4 , known as TEOS. Both compounds have become a notorious chemical precursor in two important and widely used applications: (a) the preparation of inorganic materials by sol-gel methods [1], and (b) the formation of SiO 2 , films deposited by chemical vapor deposition [2].…”

Section: Introductionmentioning

confidence: 99%

“…Both compounds have become a notorious chemical precursor in two important and widely used applications: (a) the preparation of inorganic materials by sol-gel methods [1], and (b) the formation of SiO 2 , films deposited by chemical vapor deposition [2]. The application TEOS is more familiar used to study and observation due to less reactive than TMOS and recent experiments have explored used of TEOS to plasma enhanced chemical vapor deposition processes [3,4]. This research has studied about effect of organic motif on microstructure and birefringence phenomena's, in the matrices of ceramics formed via sol-gel processing.…”

Section: Introductionmentioning

confidence: 99%

Effect Terthiophenes Units on the Microstructure and Birefringence of SiO2 Gels Prepared via Sol-Gels Processing

Kancono¹,

Senin²

2011

AIP Conference Proceedings

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Key Word : terthiophene-briged silsesquioxane, tergothiophene, lamellar, and birefringenceMaterials ceramics products based on SiO 2 gels have been produced via sol-gels processing in present of 1% NH 4 F/H 2 O as catalyst. Alkoxysilane from tetraethoxysilane (TEOS) are chose as a matrices or template sources, than the product's of syntheses precursor: 2,5-bis(trimethoxysilyl)terthiophene (= BTS3T) used as a motif organic compound. That product formed matrices as silicate backbone of terthiophene-briged silsesquioxane net-work; [O 1.5 Si-(C 4 H 2 S) n -SiO 1.5 ] n . The structure silsesquioxane terthiophene-briged formed have layer distance of 4.6and 8.6 angstroms. So, that terthiophenes units in their structure give an effect on the characteristic pattern as an ordered micro lamellar structure. Electron microscopy analyses in matrices -Si-O-Sithere spheres formed by diameter about 10 µm which are rich in silicon.The effect of terthiophenes unites on SiO 2 gels formed shown that birefringence phenomenas are strong in presence of higher quantity oligothiophenes units, and will decrease with increase quantity of alkoxysilane, with anisotropic values differences decrease every 1.125 x 10 -3 per mole SiO 2 , whereas the optical transparency of SiO 2 gels formed are increase. INTRODUCTIONPreparation of ceramics via sol-gel processing from alkoxysilane containing motif organic precursor is very widely used for development of new materials with certain characteristic of optical applications. The alkoxysilane functions were partially hydrolyzed and condensed as the matrix formation [1].The alkoxysilane are usually used are tetramethoxysilane Si(OMe) 4 , more usually know as TMOS and tetraethoxysilane, Si(OEt) 4 , known as TEOS. Both compounds have become a notorious chemical precursor in two important and widely used applications: (a) the preparation of inorganic materials by sol-gel methods [1], and (b) the formation of

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Silicon Dioxide Deposition by Atmospheric Pressure and Low‐Temperature CVD Using TEOS and Ozone

Abstract: portunity to make investigations with the STM, and to Dipl.-Phys. S. Br~uer for his help in recording the STM images and for helpful discussions about the results. We also thank the Stiftung Volkswagenwerk for financial support.

Cited by 133 publications

References 0 publications

Simultaneous P and B diffusion, in-situ surface passivation, impurity filtering and gettering for high-efficiency silicon solar cells

Simultaneous P and B diffusion, in-situ surface passivation, impurity filtering and gettering for high-efficiency silicon solar cells

Fundamental Understanding and Development of Low-Cost, High-Efficiency Silicon Solar Cells: Annual Progress Report: Sept. 1997-Aug. 1998

Effect Terthiophenes Units on the Microstructure and Birefringence of SiO2 Gels Prepared via Sol-Gels Processing

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