Silicon detectors in high-energy physics: Physics and applications

Eancoita, P. G.; Сейдман, А.

doi:10.1007/bf02740017

Cited by 9 publications

(4 citation statements)

References 78 publications

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“…Semiconductor counters behave like solid ionization chambers [19,20]. Incident charged particles deposit ionization energy and dislodge electrons, which in turn produce secondary ionization.…”

Section: Semiconductor Detectorsmentioning

confidence: 99%

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Specialized detectors

2023

Introduction to Experimental Particle Physics

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Section: Semiconductor Detectorsmentioning

confidence: 99%

“…A slice of silicon can also be etched to give narrow strips of active detector [20,22]. This provides a small area device that behaves like a MWPC but has better spatial resolution, especially for multitrack events.…”

Section: Semiconductor Detectorsmentioning

confidence: 99%

Specialized detectors

2023

Introduction to Experimental Particle Physics

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“…This universal function Φ(λ) must be evaluated numerically and a tabulation of Φ(λ) for various λ was done by Borsch-Supan [31], Seltzer and Berger [32]. The Landau distribution is asymmetric with a long tail extending to E max with a maximum for λ = 0.229 and width of W L = 4.018ξ [33].…”

Section: Straggling Theories Of Thin Absorbersmentioning

confidence: 99%

Measurement of Energy Loss Straggling of Relativistic Electrons in Thin Aluminum Foils

Babu

Badiger

2016

Acta Phys. Pol. A

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The mean energy loss straggling per unit path length of relativistic electrons in aluminum has been determined by recording electrons with a Si(Li) detector coupled to 8K multi channel analyzer. The energy loss straggling is determined by measuring the full width at half maximum of the spectrum of the incident and transmitted internal conversion electrons of energies 942 keV and 1016 keV from Bi 207 source. Measured values have been compared with theoretical values indicating that the present method can be used for measuring mean energy loss straggling.

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“…Traditionally, UV light detection has been mainly dominated by photomultiplier tubes (PMTs), thermal detectors or Si-based detectors where the fabrication techniques of these structures are mature. However, these types of devices are bulky, expensive, and fragile in nature [9,10]. In contrast, solid-state wide bandgap semiconductor PDs are compact, thermally stable, and can eliminate the use of optical filters that can reject undesired photons.…”

Section: Introductionmentioning

confidence: 99%

Recent advances and prospects for a GaN-based hybrid type ultraviolet photodetector

Zhang,

Deng,

Xia

et al. 2024

Semicond. Sci. Technol.

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Solid-state UV photodetectors (PD) have received numerous attention because of the advantages of small size, absence of external cooling, high selectivity, and the ability to utilize the energy band structure semiconductor materials to achieve detection across various wavelengths. III-nitride thin films, as typical wide bandgap semiconductors with mature n-type and p-type doping capabilities, are ideal candidates for solid-state UV-PDs. However, a combination between III-nitride and other wide bandgap materials can either enrich the functionality of such devices such as spectrum-selective and broadband UV detection, or offers opportunities to enhance device performance, including high photoresponsivity, high external quantum efficiency, low dark current and fast response time. This topical review focuses on giving a thorough review of the III-nitride based hybrid-type UV photodetectors, their recent progress and future prospects. This review highlights different optical and electrical properties of various materials including GaN, Ga2O3, ZnO, perovskite etc. By carefully choosing the materials on two sides of the heterojunction and modulating the thickness and fermi levels and corresponding layers, p-i-n, Schottky, or MSM type photodetectors were successfully fabricated with outstanding device performances and novel spectral-selective properties. The advantages for future development of such hybrid-type PDs will be discussed, such as inherently formed p-n junction with large depletion region at the interface of two different materials, capability of bandgap engineering to tune the band offset of conduction band and valence band, thus enabling large barrier height for one type of carrier without influencing the other. The drawbacks in hybrid-type UV-PD due to poor interface quality and challenges in forming electrical contact in nanostructure hybrid UV-PD will also be discussed.

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Silicon detectors in high-energy physics: Physics and applications

Cited by 9 publications

References 78 publications

Specialized detectors

Specialized detectors

Measurement of Energy Loss Straggling of Relativistic Electrons in Thin Aluminum Foils

Recent advances and prospects for a GaN-based hybrid type ultraviolet photodetector

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