Silicon crystals almost free of dislocations

Borle, W.N.; Tata, S.; Varma, S. K.

doi:10.1016/0022-0248(71)90149-7

Cited by 9 publications

(2 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The long seed crystal was effective for reducing the number of dislocations in the ingots. 19) The EPD of the ingot was 1.2 © 10 3 -3.8 © 10 4 cm ¹2 . Figure 3 Figure 4(a) shows an n-type single bulk crystal with a perfect square shape grown using a crucible with a diameter of 15 cm.…”

Section: Growth Of Square Si Single Bulk Crystals Inside Lowtemperatu...mentioning

confidence: 93%

“…The top surface of the ingot clearly showed a four-cornered pattern with four f111g faces with macrosteps (ms f111g) and four f110g side faces. 18,19) The side-face width was defined as the side length of the largest square in the four-cornered pattern on the top surface of the ingots. Therefore, the size of the square ingots was basically determined by the side-face width.…”

Section: Growth Of Si Single Bulk Crystals With Four-cornered Pattern...mentioning

confidence: 99%

See 1 more Smart Citation

Growth of square Si single bulk crystals with large side-face widths using noncontact crucible method

Nakajima

Murai

Morishita

2014

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

The noncontact crucible method was used to prepare square Si single bulk crystals. The size of the square part of the ingots was determined by the side-face width of the four-cornered pattern that appeared on the top surface. We obtained square Si single crystals with sizes of 9.4 × 9.7 and 10.9 × 11.0 cm2 that had no fan-shaped {110} faces and had diagonal lengths of up to 91% of the crucible diameter. To obtain large square Si single bulk crystals with a large side-face width using the present method, the importance of establishing a larger low-temperature region in the Si melt while maintaining a smaller initial temperature reduction was considered.

show abstract

Section: Growth Of Square Si Single Bulk Crystals Inside Lowtemperatu...mentioning

confidence: 93%

Section: Growth Of Si Single Bulk Crystals With Four-cornered Pattern...mentioning

confidence: 99%