Silicon-contacted waveguide integrated Ge/Si avalanche photodiode with 32 GHz bandwidth and multiplication gain >8

56 Gb/s NRZ O-Band Hybrid BiCMOS-Silicon Photonics Receiver Using Ge/si Avalanche Photodiode

“…The Ge/Si SACM APDs considered in this work were fabricated along with other passive and active waveguide components [9]. They are waveguide coupled and designed in a lateral SACM configuration with an epitaxial Ge waveguide acting as an absorption layer, while the charge and multiplication regions were implemented in the Si of imec's 200 mm SiPh platform [16], [17]. A cross-sectional schematic of the device Fig.…”

“…In this paper, we report on two receivers comprising of siliconphotonics waveguide-coupled Ge/Si APD and wirebonded to a SiGe BiCMOS transimpedance amplifier (TIA) [11], [12]. While most of the SACM designs reported in literature have a vertical diode design [13]- [15], the APDs in this paper are realized in a lateral configuration with metal contacts only on Si [16], [17]. An optical modulation amplitude (OMA) sensitivity of −14.4 dBm running error-free at 50 Gb/s and −18.6 dBm under KP4-FEC limit at 56 Gb/s NRZ-OOK is reported in this work.…”

Highly Sensitive 56 Gbps NRZ O-band BiCMOS-Silicon Photonics Receiver using a Ge/Si Avalanche Photodiode

“…The waveguide coupled Ge/Si APDs presented in this work were fabricated using imec's 200 mm Silicon Photonics Platform along with other passive and active waveguide components [2][3]. The devices use a lateral separateabsorption-charge-multiplication (SACM) implementation [2], with an epitaxial Ge waveguide acting as the absorption layer, and the charge and multiplication regions implemented in the 220nm Si device layer.…”

“…The waveguide coupled Ge/Si APDs presented in this work were fabricated using imec's 200 mm Silicon Photonics Platform along with other passive and active waveguide components [2][3]. The devices use a lateral separateabsorption-charge-multiplication (SACM) implementation [2], with an epitaxial Ge waveguide acting as the absorption layer, and the charge and multiplication regions implemented in the 220nm Si device layer. A crosssectional schematic of the device can be found in the inset of Fig 1. The doping profiles for the charge region in the device were optimized to have high electric fields in the multiplication region, while maintaining sufficient electric field in the absorption region to extract the photo-generated carriers.…”

“…For such high-data-rate optical links, improving link margins is of key importance, either to increase the reach of the link or to reduce the number of required lasers and their associated cost and power consumption. To achieve this, avalanche photodiodes (APDs) have shown potential to enable higher receiver sensitivities and improved optical link margins operating at 50 Gbps and beyond data rates [2]. In this paper, a receiver comprising a silicon photonics waveguide-coupled Ge/Si APD, wirebonded to a SiGe BiCMOS transimpedance amplifier (TIA) is presented.…”