2020
DOI: 10.3390/mi11040402
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Silicon Conical Structures by Metal Assisted Chemical Etching

Abstract: A simple and inexpensive method to obtain Si conical structures is proposed. The method consists of a sequence of steps that include photolithography and metal assisted chemical etching (MACE) to create porous regions that are dissolved in a post-etching process. The proposed process takes advantage of the lateral etching obtained when using catalyst particles smaller than 40 nm for MACE. The final shape of the base of the structures is mainly given by the shape of the lithography mask used for the process. Co… Show more

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Cited by 10 publications
(3 citation statements)
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“…Moreover, metal-assisted chemical etching (MACE) can be used to fabricate Si conical structures [101]. This complex technique consists of the following steps: Figures 1 and 3 show that the shape and size of the conical structures vary depending on the synthesis method and process parameters.…”
Section: Other Methodsmentioning
confidence: 99%
“…Moreover, metal-assisted chemical etching (MACE) can be used to fabricate Si conical structures [101]. This complex technique consists of the following steps: Figures 1 and 3 show that the shape and size of the conical structures vary depending on the synthesis method and process parameters.…”
Section: Other Methodsmentioning
confidence: 99%
“…For straight-hole processing, conventional processing technologies include micro-drilling, micro-milling, and stamp-forming [1] [2]. Regarding tapered hole processing, the common processing technologies include electroforming, electrical discharge machining, etching, and laser [3][4] [5].…”
Section: Introductionmentioning
confidence: 99%
“…In order to obtain complex structures, different strategies have been developed based on chemical etching [ 10 , 11 ], lithographic techniques [ 12 , 13 ] or template-based methods [ 14 , 15 ]. Laser-based methods have demonstrated to be effective in the fabrication of surface micro- and nanostructures, which have found a wide range of applications [ 16 ].…”
Section: Introductionmentioning
confidence: 99%