Silicon carbonitride, a new hard material and its relation to the confusion about ‘harder than diamond’ C3N4

Badzian, Andrzej; Badzian, T.; Roy, Rustum; Drawl, W.

doi:10.1016/s0040-6090(99)00535-0

Cited by 117 publications

(51 citation statements)

References 14 publications

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“…The difference of energy gap between Si(C) 3 N 4 and water is 3.0 (1.25) eV but that between SiC and water is 5.2, so the reaction rate between Si(C) 3 N 4 and water is higher than that between SiC and water. Although bulk crystal carbon nitride material was not obtained, there are many nano-crystalline carbon nitrides in a-CN x coatings [45,46]. The nano-crystalline carbon nitrides would have an acceleration effect on the tribochemical reaction during sliding in water [47].…”

Section: Discussionmentioning

confidence: 99%

Friction and wear properties of CNx/SiC in water lubrication

2005

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Amorphous carbon nitride coatings (a-CN x ) were deposited on SiC disk by ion beam assisted deposition (IBAD). The tribological behavior of a-CN x coating sliding against SiC ball in water was investigated and compared with that of SiC/SiC system at room temperature. The influences of testing conditions on friction coefficient and specific wear rate of both kinds of tribopairs were studied. The worn surfaces on disks were observed by scanning electron microscope (SEM). The results indicate that the running-in period of a-CN x /SiC was shorter than that of SiC/SiC system in water. At a sliding velocity of 120 mm/s, the mean steady-state friction coefficients of SiC/SiC (0.096) was higher than that of a-CN x /SiC (0.05), while at 160 mm/s, lower friction coefficient (0.01) was obtained for SiC/SiC in water. With an increment of normal load, the mean steady-state friction coefficients after running-in first decreased, reaching a minimum value, and then increased. For self-mated SiC, the specific wear rate of SiC ball was a little higher than that of SiC disk, while for a-CN x /SiC, the specific wear rate of SiC ball were 10 times smaller than that of a-CN x coating. Furthermore, the specific wear rate of SiC ball sliding against a-CN x coating was reduced by a factor up to 100$1000 in comparison to that against SiC in water. The wear mechanism of SiC/SiC system in water is related to micro-fracture of ceramic and instability of tribochemical reaction layer. Conversely, wear mechanism for a-CN x /SiC is related to formation and transfer of easy-shear friction layer.

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Section: Discussionmentioning

confidence: 99%

Friction and wear properties of CNx/SiC in water lubrication

2005

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“…[14,30] The presented activation reactions of the TrMS and HMDS precursors are consistent with the results of our gas chromatography/mass spectrometry (GC/MS) examination of the conversion products sampled from the gas phase during RP-CVD. [30] The GC/MS data revealed the presence of HMDS as the major conversion product of TrMS formed via equations (5) and (7), whereas TrMS predominated among the conversion products of HMDS, thus accounting for equation (6). The presence of 1,1,3,3-tetramethyl-1,3-disilacyclobuthane found in the conversion products of both TrMS and HMDS precursors [30] is indicative of a 'head-to-tail' dimerization of 1,1-dimethylsilene.…”

Section: Chemistry Of the Activation Stepmentioning

confidence: 99%

Reactivity of organosilicon precursors in remote hydrogen microwave plasma chemical vapor deposition of silicon carbide and silicon carbonitride thin‐film coatings

Wróbel

Walkiewicz-Pietrzykowska

Blaszczyk-Lezak

2009

Applied Organom Chemis

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A number of organosilicon precursors for silicon carbide and silicon carbonitride thin-film coatings, such as silanes, carbosilanes, aminosilanes, and disilazane, respectively, were characterized in terms of their reactivity in a remote microwave plasma chemical vapor deposition process, which was induced using hydrogen as plasma generating gas. The process displayed high selectivity with respect to the activating species and the chemical bonds in the molecular structure of the precursors. In view of very short life times of excited hydrogen plasma species the activation step takes place with an exclusive contribution of ground-state hydrogen atoms. The C-H, C-C, Si-C, Si-N, C-N and N-H bonds present in the molecules of the precursors are non-reactive and only the Si-H or Si-Si bonds play a key role in the activation step. The reactivity of the precursors was characterized in a quantitative way by the yield of the film growth parameter. The yield parameter expressing the mass of film per unit mass of the precursor fed to the reactor was calculated from the slopes of linear plots of time dependencies of film mass and precursor mass, which were determined for each investigated precursor. The reactivity of the precursors was found to be strongly dependent on the number of the Si-H units present in their molecules and those containing two Si-H units appeared to be most reactive.

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“…[2][3][4] Of the various methods used for the fabrication of Si:C:N films, the CVD techniques using organosilicon single-source precursors appeared to be very effective. The Si:C:N films were formed by; thermal CVD from ethylcyclosilazane, [5] hot-wire CVD from hexamethyldisilazane, [6] direct plasma (DP)CVD from hexamethyldisilazane, [7][8][9][10][11] bis(trimethylsilyl)carbodiimide, [10][11][12] and bis(dimethylamino)dimethylsilane, [13] RPCVD from hexamethyldisilazane, [14][15][16][17] 1-dimethylsilyl-2,2-dimethylhydrazine, [18,19] dimethylbis(2,2-dimethylhydrazino)silane, [18,19] 1,1,3,3-tetramethyldisilazane, [20,21] tris(dimethylamino)silane, [22] and (dimethylamino)dimethylsilane.…”

Section: Introductionmentioning

confidence: 99%

Remote Hydrogen Microwave Plasma CVD of Silicon Carbonitride Films from a Tetramethyldisilazane Source. Part 1: Characterization of the Process and Structure of the Films

Wróbel

Blaszczyk-Lezak

2007

Chemical Vapor Deposition

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Silicon carbonitride (Si:C:N) films are produced by hydrogen remote microwave plasma (RP)CVD using a 1,1,3,3-tetramethyldisilazane precursor. The effect of the substrate temperature on the rate and yield of the hydrogen RPCVD process, chemical composition, chemical structure, and surface morphology of the resulting film are investigated. The Arrhenius plots of the substrate temperature dependencies of the mass-and thickness-based growth rate and growth yield of Si:C:N film imply that RPCVD is controlled by the adsorption of film-forming precursors onto the growth surface. The results of Auger electron spectroscopy (AES) and Fourier transform infrared (FTIR) examinations reveal that the increase in substrate temperature from 35°C to 400°C involves the elimination of organic groups from the film and the formation of a silicon carbonitride network structure with a predominant content of Si-C carbidic bonds. The atomic force microscopy (AFM) results show that the films are morphologically homogeneous materials of surface roughness varying in a narrow range of small values (0.9 -2.0 nm).

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Silicon carbonitride, a new hard material and its relation to the confusion about ‘harder than diamond’ C3N4

Cited by 117 publications

References 14 publications

Friction and wear properties of CNx/SiC in water lubrication

Friction and wear properties of CNx/SiC in water lubrication

Reactivity of organosilicon precursors in remote hydrogen microwave plasma chemical vapor deposition of silicon carbide and silicon carbonitride thin‐film coatings

Remote Hydrogen Microwave Plasma CVD of Silicon Carbonitride Films from a Tetramethyldisilazane Source. Part 1: Characterization of the Process and Structure of the Films

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