Silicon carbide thin films with different processing growth as an alternative for energetic application

Ouadfel, A.M.; Keffous, A.; Kheloufi, A.; Cheriet, A.; Yaddaden, C.; Gabouze, N.; Kechouane, M.; Belkacem, Y.; Boukezzata, A.; Kaci, S.; Talbi, L.; Ouadah, Y.; Bozetine, I.; Rezgui, B. Dridi; Guerbous, L.; Menari, H.; Mahmoudi, B.; Menous, I.

doi:10.1016/j.optmat.2016.09.027

Cited by 15 publications

(2 citation statements)

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“…We focus on three kinds of semiconductor materials that attract much interest in the area of traditional semiconductor research and the emergent exploration of quantum technologies. Two of them are diamond [65] and silicon carbide [66], which can be used in the form of bulk materials [22,27], thin films [67,68] and nanoparticles [69][70][71] in scientific research and industrial applications. The last one is h-BN [72], which is usually synthesized to be a two-dimensional material in applications [73,74].…”

Section: Stokes and Anti-stokes Pl Spectra Of Point Defectsmentioning

confidence: 99%

Anti-Stokes excitation of optically active point defects in semiconductor materials

Lin

Wang

et al. 2022

Mater. Quantum. Technol.

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Optically addressable point defects in semiconductor materials have been identiﬁed as promising single-photon sources and spin qubits in quantum information technologies. The traditional method of exploring the optical and spin properties of these defects is using a laser with a wavelength shorter than the point defects’ zero-phonon-line (ZPL) to Stokes exciting and detecting the Stokes photonluminescence (PL). On the other hand, anti-Stokes excitation with the pumping laser’s wavelength longer than the defects’ ZPL can also be used to investigate their optical and spin properties. The anti-Stokes excitation has shown many advantages and attracted great interest. Here, we provide a brief review of the anti-Stokes excitation of optically active point defects in semiconductor materials. The Stokes and anti-Stokes PL spectra of diﬀerent point defect systems in semiconductor materials are compared. We then discuss the main mechanisms of the anti-Stokes excitation of diﬀerent physical systems and conclude that the anti-Stokes excitation of the point defect system in the semiconductor is a single-photon absorption phonon-assisted process. Finally, we summarize some practical applications of anti-Stokes excitation, including laser cooling of semiconductor materials, high-sensitivity quantum thermometry, and enhancement of the readout signal contrast of the point defect spin states. The anti-Stokes excitation of point defects in semiconductors extends the boundary of quantum technologies.

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Section: Stokes and Anti-stokes Pl Spectra Of Point Defectsmentioning

confidence: 99%

Anti-Stokes excitation of optically active point defects in semiconductor materials

Lin

Wang

et al. 2022

Mater. Quantum. Technol.

View full text Add to dashboard Cite

show abstract

“…For example, crystalline films can be obtained using pulsed laser deposition, while the sputtering DC magnetron method makes it possible to obtain amorphous SiC films. 16 The method of combined use of DC magnetron sputtering and high-power pulsed magnetron sputtering makes it possible to deposit almost stoichiometric and nanocrystalline SiC thin films at a Institute of High-Temperature Electrochemistry, Ural Branch of Russian Academy room temperature on silicon (100) substrates. 17 The hardness of the resulting coating and its Young's modulus significantly depend on the pressure of the atomizing gas.…”

Section: Introductionmentioning

confidence: 99%