Silicon carbide thin films for EUV and soft X-ray applications

Monaco, G.; Gastaldi, Massimiliano; Nicolosi, P.; Pelizzo, M. G.; Gilioli, E.; Rampino, Stefano; Bissoli, F.; Pattini, F.; Agnoli, Stefano; Granozzi, G.; Manuzzato, N.

doi:10.1140/epjst/e2009-00987-6

Cited by 15 publications

(16 citation statements)

References 13 publications

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“…Deposition temperature was controlled by two thermocouples, one located inside the graphite heater, the second one on the growth surface. Details on the deposition process are reported elsewhere [13]. One-inch diameter target was prepared starting from commercial ZnS powder 99.99% pure; after milling, powder was pressed up to 300 bar for 10 min, then sinterized in air at 900 °C for 10 h. Being the scope of the present work to grow ZnS films at low temperature, glass was chosen as substrate.…”

Section: Methodsmentioning

confidence: 99%

Low temperature pulsed electron deposition and characterization of ZnS films for application in solar cells

Zanettini

Bissoli

Nasi

et al. 2011

Cryst. Res. Technol.

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Zinc Sulphide films were grown by pulsed electron deposition (PED) from room temperature to 350 °C to investigate the possibility of its application in solar cells, in particular as an alternative buffer layer deposited at low temperature. The films were characterized by X-ray diffraction, TEM, AFM, optical absorption and electrical measurements. ZnS films display crystalline structure and columnar growth at room temperature on amorphous substrate; the crystallization improves with the substrate temperature and is predominantly related to the cubic (111) orientation, while the thicker films show coexistence of hexagonal and cubic structures. All the samples have transparencies exceeding 70% in the range 400-1000 nm, energy band gap between 3.25 and 3.65 eV increasing with temperature and resistivity in the range of 10 4 -10 6 Ωcm. The optimization of the growth rate as a function of the growth parameters (substrate temperature and electron gun voltage) is also discussed. The reported results indicate that ZnS might be a suitable material for photovoltaic applications, specifically in process requiring low deposition temperature.

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Section: Methodsmentioning

confidence: 99%

Low temperature pulsed electron deposition and characterization of ZnS films for application in solar cells

Zanettini

Bissoli

Nasi

et al. 2011

Cryst. Res. Technol.

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“…This fact can also be due to the target stoichiometry, as we have shown in a previous work [23], which can be itself carbon-rich because of the sintering procedure [24], but also by the sputtering techniques itself. PED and PLD are quite similar techniques which involves an high energetic beam, respectively an electron beam flux and a laser beam, which impinges on a target leading to the formation of a plasma plume of the target species.…”

Section: Deposition Of the Ped And Pld Samplesmentioning

confidence: 82%

Optical constants of silicon carbide deposited with emerging PVD techniques

et al. 2009

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Silicon carbide (SiC) is an attractive material for EUV and soft X-ray optics. CVD-deposited silicon carbide (deposited at 1400° C on Si substrate) is the best reflective material in the whole EUV interval (with about the 48% of reflectance at 121.6 nm). Despite of this, SiC thin films deposited with PVD techniques, such as magnetron sputtering, on silicon substrate, do not have the same performances and they undergo to a degradation with time, probably because of some stoichiometry reason (carbon rich). Depositing stable SiC with PVD techniques is crucial in building ML's, like Si/SiC and SiC/Mg for soft X-ray applications (such space telescope and photolithography). We deposited some preliminary samples using the Pulsed Laser Deposition (PLD) and the Pulsed Electron Deposition (PED) techniques achieving a good reflectance in the whole EUV range (27% at near normal incidence at 121.6 nn) on a silicon substrate. The higher energy involved in these deposition processes could lead to a film with a stoichiometry much closer to the target one. The reflectivity of the deposited films has been measured at the BEAR beamline of the ELETTRA synchrotron in Trieste (Italy) and the optical constants retrieved at six wavelength from 121.6 nm down to 5 nm.

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“…The target-substrate distance has been set to 60 mm from the center of the target. Off-axis geometry [10] gives lower deposition rates compared to other methods of particle filtering such as filtering by magnetic fields [13]. Unfortunately, the substrate temperature used in this work exceeds the Curie temperature of typical permanent magnet, such as NdFeB, employed in our previous experiment [10].…”

Section: Methodsmentioning

confidence: 87%

“…Off-axis geometry [10] gives lower deposition rates compared to other methods of particle filtering such as filtering by magnetic fields [13]. Unfortunately, the substrate temperature used in this work exceeds the Curie temperature of typical permanent magnet, such as NdFeB, employed in our previous experiment [10]. The pulsed laser beam repetition rate has been set to 10 Hz, using a laser fluence of 1.4 J/cm 2 for all the depositions with a focalized laser spot of 7.7 mm 2 .…”

Section: Methodsmentioning

confidence: 99%

“…Moreover, the high energy of the process, in certain cases aided by the substrate temperature, can lead to single crystal growth. In previous papers [5,10] we already reported successful depositions of low roughness SiC thin films by PLD using an Nd-YAG laser at the fundamental wavelength ____________________ www.crt-journal.org (1064 nm) and at room temperature obtaining thin films with amorphous structure. In others works [11,12] we have reported results on synthesize 3C-SiC layers deposited by PLD increasing the temperature up to 650 °C.…”

Section: Introductionmentioning

confidence: 99%

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Spectroscopic study of β‐SiC prepared via PLD at 1064 nm

Monaco

Garoli

Natali³

et al. 2011

Cryst. Res. Technol.

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The physical properties of the wide band-gap β-SiC make it a promising material for future applications in high-power, high-temperature and high-frequency devices. Up to now, SiC has been successfully employed in field effect transistors, bipolar storage capacitors and ultraviolet detectors. In this work, we present new attempts to prepare crystalline β-SiC at 650 °C by means of Pulsed Laser Deposition (PLD). X-Ray Diffraction (XRD) and Scanning Electron Microscope (SEM) have been used to determine the crystalline and morphological properties of the deposited β-SiC thin films grown on different substrates: sapphire and silicon. The optical constants in the visible range and the band gap energy have been determined by Spectroscopic Ellipsometry (SE) which is a powerful non-destructive technique for high accuracy measurements. SiC thin films deposited on sapphire give rise to hetero-epitaxial growth resulting in an organized structure while the sample deposited on silicon grows polycrystalline. The correlation between the band-gap energy and the crystalline phases and growth conditions will be discussed.

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Silicon carbide thin films for EUV and soft X-ray applications

Cited by 15 publications

References 13 publications

Low temperature pulsed electron deposition and characterization of ZnS films for application in solar cells

Low temperature pulsed electron deposition and characterization of ZnS films for application in solar cells

Optical constants of silicon carbide deposited with emerging PVD techniques

Spectroscopic study of β‐SiC prepared via PLD at 1064 nm

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