Silicon carbide quantum dots for bioimaging

Beke, D.L.; Szekrényes, Zsolt; Pálfi, Dénes; Róna, Gergely; Balogh, I; Maák, Pál; Katona, Gergely; Czigány, Zsolt; Rózsa, Balázs; Buday, László; Vértessy, Beáta G.; Gali, Ádám

doi:10.1557/jmr.2012.296

Cited by 42 publications

(44 citation statements)

References 20 publications

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“…Two sources of SiC nanoparticles were explored: commercial 3C SiC nanomaterial with an average Advanced Silicon Carbide Devices and Processing C ) for 3C, where the ground state and excited state are visualised. The defect ZPL is around 648 nm from ensemble measurements (not clearly observed at the single level at room temperature).c Experimental set-up used to study the 3C-SiC nanoparticle defect SPS and room temperature PL measured from SPS [18] size of 45 nm suspended in ethanol and large (size: 200-500nm) in-house synthesised SiC nanocrystals suspended in MilliQ, dried on glass cover slip [57]. A room temperature custom-built confocal microscope combined with an atomic force microscope ( Figure 7c) was used to correlate the size of the nanocrystals with PL, while photon correlation was used to determine the quantum properties of the PL.…”

Section: Single-photon Sources In Nanomaterialsmentioning

confidence: 99%

Silicon Carbide for Novel Quantum Technology Devices

Castelletto¹,

Rosa²,

Johnson³

2015

Advanced Silicon Carbide Devices and Processing

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Silicon carbide (SiC) has recently been investigated as an alternative material to host deep optically active defects suitable for optical and spin quantum bits. This material presents a unique opportunity to realise more advanced quantum-based devices and sensors than currently possible. We will summarise key results revealing the role that defects have played in enabling optical and spin quantum measurements in this material such as single photon emission and optical spin control. The great advantage of SiC lies in its existing and well-developed device processing protocols and the possibilities to integrate these defects in a straightforward manner. There is particular current interest in nanomaterials and nanophotonics in SiC that could, once realised, introduce a new platform for quantum nanophotonics and in general for photonics. We will summarise SiC nanostructures exhibiting optical emission due to multiple polytypic bandgap engineering and deep defects. The combination of nanostructures and in-built paramagnetic defects in SiC could pave the way for future single-particle and single-defect quantum devices and related biomedical sensors with single-molecule sensitivity. We will review relevant classical devices in SiC (photonics crystal cavities, microdiscs) integrated with intrinsic defects. Finally, we will provide an outlook on future sensors that could arise from the integration of paramagnetic defects in SiC nanostructures and devices.Keywords: Silicon carbide deep defects, Paramagnetic properties, Optical-detected magnetic resonance, Single-photon sources IntroductionThe most common and technologically advanced SiC polytypes are 4H-SiC and 6H-SiC with hexagonal structures and 3C-SiC with a zinc-blende crystal structure (cubic). High-quality © 2015 The Author(s). Licensee InTech. This chapter is distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.bulk single-crystal 3C-SiC can be grown epitaxially on different substrates, most notably on silicon. This has led to many exciting devices fabricated with this particular polytype [1]. SiC has a wide bandgap (2.4-3.2 eV depending on the polytype), a high thermal conductivity, the ability to sustain high electric fields before breakdown and the highest maximum current density, making it ideal for high-power electronics [2]. More recently, it has become a notable material in the field of quantum computing and spintronics as several of its intrinsic defects are associated with an electron spin that can be used as quantum bit [3,4]. To enhance solid-state quantum systems scalability, a fully integrated device with quantum control should be built; thus, quantum systems should be part of the material used to fabricate the final device. Other solid-state quantum systems fully integrated into a functional device [5][6][7] operate at cryogenic temperatures (4 K or below),...

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Section: Single-photon Sources In Nanomaterialsmentioning

confidence: 99%

Silicon Carbide for Novel Quantum Technology Devices

Castelletto¹,

Rosa²,

Johnson³

2015

Advanced Silicon Carbide Devices and Processing

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“…Silicon carbide is a wide-bandgap semiconductor, having biocompatiblity and compatibility with traditional silicon-based semiconductor technologies among its most prominent features [20,21,[27][28][29][30][31]. One of the most prospective defect centres studied recently in it, is the target of our investigation, [32] the carbon antisite-vacancy centre, C Si V C .…”

Section: Si -V Cmentioning

confidence: 99%

“…spintronics [1,2], quantum computing [3][4][5][6], nanometrology [7][8][9][10][11][12][13][14][15][16][17][18], biosensing [19][20][21], and experimental validation of foundations of quantum mechanics [18,22]. Among these systems, point defects in crystalline materials form the tiniest ones.…”

Section: Introductionmentioning

confidence: 99%

Two-site diamond-like point defects as new single-photon emitters

Bodrog

Gali

2014

EPJ Web of Conferences

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Abstract. In this small review, we recall two promising candidates for biomarker nanosystems, in which a two-site defect embedded in a diamond-like lattice makes a single-photon source. The two candidates are the silicon-vacancy defect in diamond, and the carbon antisite-vacancy pair in 4H silicon carbide. These defects, which by symmetry resemble to the famous nitrogen-vacancy defect in diamond, bear an exact or nearly exact C 3v symmetry, giving them selection rules which lead their important magnetooptical properties. The embedding diamond-like crystal lattice not only determines the symmetry of two-site defects, but also ensure a nontoxic vehicle on which they reside; a definitive requirement against biomarker nanosystems. In the silicon-vacancy case, the size of the biomarker system is also an important feature. Nanoparticles of the embedding crystal do not exceed the size of molecular clusters, in order to be able to aid measuring all types of relevant biomolecular processes.

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“…[1][2][3][4][5][6][7] Silicon carbide is a wide band gap semiconductor with excellent hardness and chemical resistivity 5 and is also known as a bioinert material. [8][9][10] Depending on the starting bulk powder, the surface of SiC QDs is often rich in various functional groups which can result in diverse behaviors in biological environments ranging from bioinertness to changes in cell function and cytotoxicity.…”

Section: Introductionmentioning

confidence: 99%

“…[8][9][10] Depending on the starting bulk powder, the surface of SiC QDs is often rich in various functional groups which can result in diverse behaviors in biological environments ranging from bioinertness to changes in cell function and cytotoxicity. 3,11 While the successful application of the SiC QDs in bioimaging techniques is related to their bioinert and photostable properties, 2,6 further applications in medicine and drug delivery rely on the ability of engineering the desired surface properties by attaching different functional molecular groups. To obtain tailor-made functionalized surfaces it is necessary to understand the complex structure of the QD surface.…”

Section: Introductionmentioning

confidence: 99%

Chemical Transformation of Carboxyl Groups on the Surface of Silicon Carbide Quantum Dots

et al. 2014

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Silicon carbide quantum dots in the size range of 1-10 nm are in the center of interest with unique properties that makes them very promising biomarkers. A central requirement for this application is the control over the complex structure of the surface to enable further surface functionalization processes, which are crucial for drug delivery.In this paper a temperature dependent infrared and photoluminescence spectroscopy study, combined with ab initio modeling, is presented in order to reveal the chemical transformations of the surface termination groups. We found that at temperatures above 370 K acid anhydride groups form by condensation of water between neighboring * To whom correspondence should be addressed 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 carboxyl groups. The presence of the anhydride groups reveals the proximity of the carboxyl groups, and represents a new possibility of selective engineering of new hybrid materials involving silicon carbide quantum dots.

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Silicon carbide quantum dots for bioimaging

Cited by 42 publications

References 20 publications

Silicon Carbide for Novel Quantum Technology Devices

Silicon Carbide for Novel Quantum Technology Devices

Two-site diamond-like point defects as new single-photon emitters

Chemical Transformation of Carboxyl Groups on the Surface of Silicon Carbide Quantum Dots

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