2005
DOI: 10.1016/j.solmat.2004.05.017
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Silicon (BSFR) solar cell AC parameters at different temperatures

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Cited by 31 publications
(29 citation statements)
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“…However, the values of the C p and R p model parameters vary depending on factors such as illumination, temperature, and cell voltage bias [20], [21]. When the R p value changes, resistance changes are visualized as the resistive magnitude regions moving up or down directly with the resistance change.…”
Section: A Pv Cell Dynamic Modelmentioning
confidence: 99%
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“…However, the values of the C p and R p model parameters vary depending on factors such as illumination, temperature, and cell voltage bias [20], [21]. When the R p value changes, resistance changes are visualized as the resistive magnitude regions moving up or down directly with the resistance change.…”
Section: A Pv Cell Dynamic Modelmentioning
confidence: 99%
“…The R p value can be determined directly from the dc impedance, R p + R s , since it is assumed that R s is constant. Generally, temperature increase slightly lowers resistance due to a higher number of free carriers, and increasing illumination also lowers resistance slightly [21], [22]. An intuitive way to understand how the dc impedance and, in turn, R p change under various conditions is from the slope of the I-V curve.…”
Section: B Parallel Resistancementioning
confidence: 99%
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“…A diffusion and junction capacitance model for si solar cell is given in [124], where the cells are tested at different temperatures to find the junction temperature. Dynamic models with more than one dynamic parameter are presented in this method.…”
Section: Dynamic Modelsmentioning
confidence: 99%