Silicon Bipolar Microwave Power Transistors

Microwave Solid State Devices

“…The ac common-emitter current gain h fe is expressed as Microwave power transistors are usually operated under a common-base configuration (39), since the power gain when operated under that configuration is higher than the gain obtained under a common-emitter configuration. A measure of the RF power gain for the transistor is indicated by the unilateral power gain U, which can be expressed as…”

A new technology for Si microwave power transistor manufacturing

“…Attempt had been made to change this manufacturing process. One approach was to integrate the impedance matching circuits and the Si BJT on one chip of silicon [2]. It was pursued without success because of the formidable R F loss caused by conductive Si substrates [3].…”