Silicon bipolar fixed and variable gain amplifier MMICs for microwave and lightwave applications up to 6 GHz

Kipnis, I.; Kukielka, J.F.; Wholey, J.; Snapp, C.P.

doi:10.1109/mwsym.1989.38681

Cited by 36 publications

(3 citation statements)

References 3 publications

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“…The solid-state devices present a smaller size, longer lifetime, more reliability, and cheaper price than the vacuum-tube equivalents. Moreover, if transistors are tuned to operate in a switching mode, the RF source may generate high power with a high efficiency, up to 100% in principle [2,3]. For example, a 2.7-kW power amplifier operating in a class-E/F mode was implemented at 29 MHz by combining eight vertically double diffused MOS transistors [4].…”

Section: Measurement Resultsmentioning

confidence: 99%

“…Upon so many topologies of wideband amplifiers, there are basically two most popular inductorless two-stage wideband amplifier configurations: (1) the Kukielka amplifier [ Fig. 1(a)] with shunt-series and shunt-shunt feedback loops [1][2][3][4] and (2) the Meyer amplifier [ Fig. 1(b)] with shunt-series and series-shunt feedback loops [5][6][7].…”

Section: Introductionmentioning

confidence: 99%

“…A Kukielka amplifier [1][2][3][4] preserves the broadband characteristics of the Cherry-Hooper amplifier, and the global shuntseries feedback loop can further increase the bandwidth. The input/output matching is achieved simultaneously by the global shunt-series feedback loop and the local shunt-shunt feedback loop.…”

Section: Introductionmentioning

confidence: 99%

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Terahertz wave switch based on silicon photonic crystals

Hong

2007

Appl. Opt.

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A compact and integrated terahertz (THz) wave photonic crystal switch is proposed in silicon. The switch operates based on a dynamic shift of the photonic bandgap by using an external applied electric field. The plane wave expansion method and the finite-difference time-domain method are used to verify and analyze the characteristics of the proposed THz wave switch. Numerical simulation results show that the THz wave switch has a high extinction ratio of 29.9 dB.

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Section: Measurement Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Terahertz wave switch based on silicon photonic crystals

Hong

2007

Appl. Opt.

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DC‐2.1 GHz CMOS multiple feedback transimpedance amplifiers with high dynamic range and linearity

Chiang

Chen

et al. 2002

Micro & Optical Tech Letters

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A CMOS wideband transimpedance amplifier with multiple‐resistive feedback loops is reported for first time. This amplifier was fabricated by the 0.35‐μm CMOS process. Multiple‐feedback technique was used to achieve terminal impedance matching and wide bandwidth. The experimental results showed that a transimpedance gain of 51.7 dBΩ and a 3‐dB bandwidth of 2.1 GHz were obtained. High input P1dB of −5 dBm and input IP3 of 1 dBm were also measured. The high dynamic range and high linearity achieved were attributed to the multiple feedback technique used. © 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 36: 60–61, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10670

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Low-noise GaInP/GaAS HBT wideband dual feedback amplifiers using Kukielka and Meyer topologies

Syu

Meng

et al. 2010

Microw. Opt. Technol. Lett.

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GaInP/GaAs HBT inductorless wideband amplifiers using shunt‐series shunt‐shunt dual‐feedback topology (Kukielka topology) and shunt‐series series‐shunt dual‐feedback topology (Meyer topology) are demonstrated in this article. Three amounts of feedback are applied on each topology. At the high‐gain mode, the Kukielka/Meyer wideband amplifier achieves the small‐signal power gain of 30/27 dB with the 3‐dB bandwidth of 6 GHz at a 5 V supply. The noise figure of both amplifiers is lower than 3 dB within 6 GHz. To increase the amount of feedback widens the bandwidth at the cost of power gain and noise figure degradation. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 1486–1489, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25280

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Silicon bipolar fixed and variable gain amplifier MMICs for microwave and lightwave applications up to 6 GHz

Cited by 36 publications

References 3 publications

Terahertz wave switch based on silicon photonic crystals

Terahertz wave switch based on silicon photonic crystals

DC‐2.1 GHz CMOS multiple feedback transimpedance amplifiers with high dynamic range and linearity

Low-noise GaInP/GaAS HBT wideband dual feedback amplifiers using Kukielka and Meyer topologies

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