Silicon-based optoelectronics: progress towards large scale optoelectronic integration and applications

Gao, Dingshan; Zhou, Zhiping

doi:10.1007/s12200-022-00030-7

Cited by 3 publications

(1 citation statement)

References 9 publications

(8 reference statements)

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“…Siliconbased optoelectronic technology combines the advantages * Author to whom any correspondence should be addressed. of photonics and electronics, making it the most promising way to achieve high-speed transmission, low power consumption and high bandwidth [1]. Many photonic devices have been grown on silicon [2,3]; however, there is still a lack of high-efficiency silicon-based lasers which are key components in silicon-based optoelectronic integration.…”

Section: Introductionmentioning

confidence: 99%

Design of distributed feedback lasers grown on Si using time-domain traveling wave model combined with mode refractive index method

Ming¹,

Wang²,

Liu³

et al. 2023

Laser Phys.

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This paper proposes an optimization method combining the time-domain traveling wave model and the mode refractive index method, employed for characterizing both the transverse and longitudinal modes of quantum dot distributed feedback (DFB) lasers grown on Si. We use this method to optimize the overall performance of the Si-based DFB laser, and determine the material and chip structural parameters, including the ridge width, etching depth, grating thickness and grating position as optimization parameters. Here, the optimal DFB laser operating under fundamental transverse and single longitudinal mode is obtained. Its threshold current is as low as 5 mA, the slope efficiency is as high as 0.77 mW mA−1, and the side mode suppression ratio is up to 48 dB. When the injection current is 150 mA, the output power exceeds 100 mW. The corresponding ridge width, etching depth and grating thickness are 2 μm, 1.3 μm and 20 nm, respectively. The distance from the grating to the active region is 200 nm. Therefore, the novel method presented in this paper offers an effective scheme for the design of DFB lasers grown on Si with excellent performance.

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Section: Introductionmentioning

confidence: 99%

Design of distributed feedback lasers grown on Si using time-domain traveling wave model combined with mode refractive index method

Ming¹,

Wang²,

Liu³

et al. 2023

Laser Phys.

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Photoactive materials and devices for energy-efficient soft wearable optoelectronic systems

et al. 2023

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High Efficiency Ultra-Thin Normal-Incidence Ge-On-Si Photodetector Based on Optical Metasurface

Zhang,

Lin,

Liu

et al. 2024

NANO

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The much thicker intrinsic absorption layer (IAL) in normal-incidence Ge-on-Si photodetectors (NIPD) usually causes a contradiction between responsivity and bandwidth. In response to this issue, here, we simulate the design of an NIPD with geranium (Ge) layers based on a “fishnet” metasurface, leading to a reduced device thickness as thin as 380[Formula: see text]nm. The optical simulation results show that the light field can be perfectly localized in the 210[Formula: see text]nm IAL, and the absorptivity is as high as 99.45% at 1550[Formula: see text]nm, which is even better than bulk materials. Moreover, the electrical simulation results suggest that the horizontal size of the photosensitive region can be reduced to 11.2 [Formula: see text]m, while the responsivity of the photodetector is close to 1 A/W at −1[Formula: see text]V bias voltage, which is nearly 23 times that of a bulk device with the same thickness, and the 3dB bandwidth is up to 40[Formula: see text]GHz, which can be compared with waveguide photodetectors. Besides, this device also demonstrates a high signal-to-noise ratio with a low dark current of 28.68 nA, making it an excellent PD for opto-electrical communication.

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Silicon-based optoelectronics: progress towards large scale optoelectronic integration and applications

Cited by 3 publications

References 9 publications

Design of distributed feedback lasers grown on Si using time-domain traveling wave model combined with mode refractive index method

Design of distributed feedback lasers grown on Si using time-domain traveling wave model combined with mode refractive index method

Photoactive materials and devices for energy-efficient soft wearable optoelectronic systems

High Efficiency Ultra-Thin Normal-Incidence Ge-On-Si Photodetector Based on Optical Metasurface

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