Silicon-Based Nanoheterostructures With Quantum Dots

Двуреченский, А. В.; Yakimov, A. I.

doi:10.1016/b978-0-12-810512-2.00004-4

Cited by 7 publications

(7 citation statements)

References 94 publications

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“…14. The main features of nanosized GeSi QD embedded in a Si matrix are related to resonant tunneling phenomena and conductance oscillation in GeSi QD MOSFET, photoconductivity of dense arrays of QDs (up to 10 12 cm -2 ) in the near and mid-infrared ranges, spin transport phenomena, ferromagnetic properties of the Mn doped QDs [22].…”

Section: Gesi Quantum Dotsmentioning

confidence: 99%

“…The heavily doped Si layers serve as the emitter and collector of the detector. The photoresponse of QDIP in a mid-infrared wave region is attributed to the transitions from the hole states in QD to continuum states of the Si matrix and subsequent transportation by an internal or built-in electric field [22,23]. The photocurrent of p-type Ge/Si QDIPs is generated in the mid-wave atmospheric window (3 -5 μm) and originated from the transitions between the hole-states bound inside QDs and continuum or quasi-bound states of the Si matrix.…”

Section: Gesi Quantum Dotsmentioning

confidence: 99%

“…The large hole mass leads to the reduced bound-to-continuum transition matrix elements and low mobility of charge carriers. At zero bias, the mid-IR responsivity of ten-period GeSi QDIP does not exceed 5 mA/W at a temperature of T = 80 K. Replacing Si barriers surrounding Ge QDs with a SiGe alloy (where the Ge fraction is 18%) allow to get over 100% photocurrent enhancement due to the smaller hole mass in the SiGe layers, which enables more efficient light absorption and photoexcited hole transportation [22].…”

Section: Gesi Quantum Dotsmentioning

confidence: 99%

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Semiconductor Nanostructures for Modern Electronics

Aseev

Латышев

Двуреченский

2020

SSP

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Modern electronics is based on semiconductor nanostructures in practically all main parts: from microprocessor circuits and memory elements to high frequency and light-emitting devices, sensors and photovoltaic cells. Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) with ultimately low gate length in the order of tens of nanometers and less is nowadays one of the basic elements of microprocessors and modern electron memory chips. Principally new physical peculiarities of semiconductor nanostructures are related to quantum effects like tunneling of charge carriers, controlled changing of energy band structure, quantization of energy spectrum of a charge carrier and a pronounced spin-related phenomena. Superposition of quantum states and formation of entangled states of photons offers new opportunities for the realization of quantum bits, development of nanoscale systems for quantum cryptography and quantum computing. Advanced growth techniques such as molecular beam epitaxy and chemical vapour epitaxy, atomic layer deposition as well as optical, electron and probe nanolithography for nanostructure fabrication have been widely used. Nanostructure characterization is performed using nanometer resolution tools including high-resolution, reflection and scanning electron microscopy as well as scanning tunneling and atomic force microscopy. Quantum properties of semiconductor nanostructures have been evaluated from precise electrical and optical measurements. Modern concepts of various semiconductor devices in electronics and photonics including single-photon emitters, memory elements, photodetectors and highly sensitive biosensors are developed very intensively. The perspectives of nanostructured materials for the creation of a new generation of universal memory and neuromorphic computing elements are under lively discussion. This paper is devoted to a brief description of current achievements in the investigation and modeling of single-electron and single-photon phenomena in semiconductor nanostructures, as well as in the fabrication of a new generation of elements for micro-, nano, optoelectronics and quantum devices.

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Section: Gesi Quantum Dotsmentioning

confidence: 99%

Section: Gesi Quantum Dotsmentioning

confidence: 99%

Section: Gesi Quantum Dotsmentioning

confidence: 99%

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Semiconductor Nanostructures for Modern Electronics

Aseev

Латышев

Двуреченский

2020

SSP

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“…By shrinking the size of the products, photolithography makes a leap forward in the manufacture of electronic components. However, both the traditional photolithography and other lithography techniques derived from or substituted for it, including dip-pen nanolithography (Ginger et al, 2004), capillary force lithography (Kim et al, 2001), nanoimprint lithography (Dvurechenskii and Yakimov, 2017;Schift, 2008), soft lithography (Geissler and Xia, 2004), transfer lithography (Yao et al, 2013;Yao et al, 2021) and others, are inherently twodimensional. Features currently available in 3D structures using these methods have not be comparable to what can be achieved in 2D (LaFratta et al, 2007).…”

Section: Introductionmentioning

confidence: 99%

“…For more than half a century, the needs for high-resolution, well-defined and complex three-dimensional (3D) microstructures in diverse fields such as information technology, electronics, photonics, and micro-electromechanical systems (MEMS), bionics and biomedical microdevices have led to the rapid development of many novel 3D microfabrication techniques ( LaFratta et al, 2007 ; Lee K.-S. et al, 2008 ; Dvurechenskii and Yakimov, 2017 ; Fritzler and Prinz, 2019 ).…”

Section: Introductionmentioning

confidence: 99%

Two-photon polymerization for 3D biomedical scaffolds: Overview and updates

Jing

Fu²,

Yu³

et al. 2022

Front. Bioeng. Biotechnol.

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The needs for high-resolution, well-defined and complex 3D microstructures in diverse fields call for the rapid development of novel 3D microfabrication techniques. Among those, two-photon polymerization (TPP) attracted extensive attention owing to its unique and useful characteristics. As an approach to implementing additive manufacturing, TPP has truly 3D writing ability to fabricate artificially designed constructs with arbitrary geometry. The spatial resolution of the manufactured structures via TPP can exceed the diffraction limit. The 3D structures fabricated by TPP could properly mimic the microenvironment of natural extracellular matrix, providing powerful tools for the study of cell behavior. TPP can meet the requirements of manufacturing technique for 3D scaffolds (engineering cell culture matrices) used in cytobiology, tissue engineering and regenerative medicine. In this review, we demonstrated the development in 3D microfabrication techniques and we presented an overview of the applications of TPP as an advanced manufacturing technique in complex 3D biomedical scaffolds fabrication. Given this multidisciplinary field, we discussed the perspectives of physics, materials science, chemistry, biomedicine and mechanical engineering. Additionally, we dived into the principles of tow-photon absorption (TPA) and TPP, requirements of 3D biomedical scaffolders, developed-to-date materials and chemical approaches used by TPP and manufacturing strategies based on mechanical engineering. In the end, we draw out the limitations of TPP on 3D manufacturing for now along with some prospects of its future outlook towards the fabrication of 3D biomedical scaffolds.

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