1995
DOI: 10.1016/0924-4247(95)00992-2
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Silicon anisotropic etching in KOH-isopropanol etchant

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Cited by 96 publications
(63 citation statements)
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“…This value is compatible with that obtained with this type of silicon etching (54.7). [15] This geometry shows that the shrinkage that takes place during the annealing step is essentially isotropic. The high surface energy of the end of the tip is not sufficient to cause substantial deformation and rounding during the sintering at this temperature.…”
mentioning
confidence: 94%
“…This value is compatible with that obtained with this type of silicon etching (54.7). [15] This geometry shows that the shrinkage that takes place during the annealing step is essentially isotropic. The high surface energy of the end of the tip is not sufficient to cause substantial deformation and rounding during the sintering at this temperature.…”
mentioning
confidence: 94%
“…Moreover, the etch rates are significantly affected by the impurities (or additives) in the etchant. A low concentration of IPA in KOH [33,[129][130][131][132][133] and a very small concentration of surfactant (e.g. 0.1% v/v) in TMAH [134][135][136][137][138][139][140][141][142][143][144][145][146][147] ensure a significant reduction in the etch rates of {110} and its vicinal planes (or the planes between {110} and {111} surfaces such as {441}, {331}, {221}, etc.).…”
Section: Difference Between Etch Rate Underetching and Undercuttingmentioning
confidence: 99%
“…In Fig. 3 Barycka and Zubel (1995 During conventional MCHS fabrication using AE110ae wafers, the etched structures at the ends of the microchannels are usually ignored because they are cut away to fit the geometric shape of the chips. The structures at the end of the etched microchannels for the W ch =500 lm case shown in Fig.…”
Section: Conventional Mchsmentioning
confidence: 99%