2019
DOI: 10.1016/j.apsusc.2018.10.064
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Silicon and silicon-germanium nanoparticles obtained by Pulsed Laser Deposition

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Cited by 10 publications
(7 citation statements)
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“…The SiGe NC-based structures that are usually reported in the literature are either thin films of SiGe only , or thin films and multilayer structures with SiGe NCs embedded in different oxide matrices, , the most commonly used being SiO 2 . Using films of the polycrystalline SiGe alloy only is disadvantageous because of the nonradiative recombination centers formed at the crystal grain boundaries, decreasing the photogenerated carrier density.…”
Section: Introductionmentioning
confidence: 99%
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“…The SiGe NC-based structures that are usually reported in the literature are either thin films of SiGe only , or thin films and multilayer structures with SiGe NCs embedded in different oxide matrices, , the most commonly used being SiO 2 . Using films of the polycrystalline SiGe alloy only is disadvantageous because of the nonradiative recombination centers formed at the crystal grain boundaries, decreasing the photogenerated carrier density.…”
Section: Introductionmentioning
confidence: 99%
“…22 The SiGe NC band gap can be tuned by alloying of Ge and Si with different compositions, 23 by changing NC size, shape, 22 and crystalline structure, 24 leading to the improvement of the electronic and optical properties. The SiGe NC-based structures that are usually reported in the literature are either thin films of SiGe only 25,26 or thin films and multilayer structures with SiGe NCs embedded in different oxide matrices, 13,27−30 the most commonly used being SiO 2 . Using films of the polycrystalline SiGe alloy only is disadvantageous because of the nonradiative recombination centers formed at the crystal grain boundaries, 26 decreasing the photogenerated carrier density.…”
Section: ■ Introductionmentioning
confidence: 99%
“…As shown in Fig. 4b, peaks at 281-292 cm −1 , 484-495 cm −1 , and 388-413 cm −1 can be attributed to the phonon modes of Ge−Ge, Si−Si and Ge−Si bonds 44,45 , respectively. Peaks at~640 and~730 cm −1 can be assigned to Si−H bonds 46 , and broad peaks at~2100 cm −1 are assigned to Si−H 2 , which is present only at the sides of silicon nanosheets 46,47 .…”
Section: Resultsmentioning
confidence: 91%
“…Moreover, the PLD technique can be easily adapted to increase the range of applications: by limiting the number of pulses, one can deposit nanoparticles instead of thin films [113]. Two targets of different materials can be irradiated simultaneously and the intermixing plasma plumes can create a compositional library on a substrate [114].…”
Section: Methods Overviewmentioning
confidence: 99%