2013 IEEE 26th International Conference on Micro Electro Mechanical Systems (MEMS) 2013
DOI: 10.1109/memsys.2013.6474168
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Silicon accelerometer with differential Frequency Modulation and continuous self-calibration

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Cited by 39 publications
(26 citation statements)
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“…6). As could be expected, (17) and (18) yield similar results when the DC bias is small ( 1   ) but overestimate the value of 0 v . For finite values of  , the two methods no longer agree: while transient simulation of (1) show that (18) fails to predict the correct resonant pull-in condition for finite values of  , the results obtained with (17) are very accurate.…”
Section: Application To Square-wave Actuationsupporting
confidence: 75%
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“…6). As could be expected, (17) and (18) yield similar results when the DC bias is small ( 1   ) but overestimate the value of 0 v . For finite values of  , the two methods no longer agree: while transient simulation of (1) show that (18) fails to predict the correct resonant pull-in condition for finite values of  , the results obtained with (17) are very accurate.…”
Section: Application To Square-wave Actuationsupporting
confidence: 75%
“…The smallest value of 0 v for which the system is unstable is noted down. These results are compared with those obtained with (17) and (18) (Fig. 6).…”
Section: Application To Square-wave Actuationmentioning
confidence: 82%
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“…A vertical resonant accelerometer based on a nanoelectromechanical oscillator is beneficially attempted in the literature [ 14 ]. The work in [ 15 ] presents a new resonant silicon accelerometer based on differential frequency modulation. The in-plane accelerometer is transformed into frequency variation by electrostatic stiffness.…”
Section: Introductionmentioning
confidence: 99%
“…High performance applications still require better resolution, sensitivity, dynamic range and long-term sensitivity than the current state-of-the-art. So far the approaches used to deliver high performance accelerometers have been based on highorder ∑Δ modulators [1], [2] and more recently, resonance frequency modulation [3]. The first has shown a noise level of 1-2µg/√Hz and a bias stability of 10µg over 1hour and ±100µg after 24 hours, with temperature compensation and complex 4th order ∑Δ modulators while the latter has shown 1mg bias drift over 6 hours and a noise level of 10 µg/√Hz.…”
Section: Introductionmentioning
confidence: 99%