Silicidation and carburization of the tungsten filament in HWCVD with silacyclobutane precursor gases

Shi, Yujun; Tong, Ling; Eustergerling, Brett; Li, X.M.

doi:10.1016/j.tsf.2011.01.291

Cited by 11 publications

(11 citation statements)

References 19 publications

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“…13) They explained these results by boron accommodation into the wire, based on secondary ion mass spectroscopic analysis. Similar processes of silicidation [14][15][16][17][18][19][20][21] and carburization [21][22][23][24] of W wires have been observed, although silicidation is less remarkable at high wire temperatures. In the present phosphorus systems, however, phosphorization does not occur at any temperature.…”

Section: Discussionmentioning

confidence: 74%

Catalytic decomposition of phosphorus compounds to produce phosphorus atoms

Umemoto

Kanemitsu

Kuroda

2014

Jpn. J. Appl. Phys.

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Vacuum-ultraviolet laser-induced fluorescence identified atomic phosphorus in the gas phase when phosphine, triethylphosphine, or molecular phosphorus sublimated from solid red phosphorus was decomposed on heated metal wire surfaces. Atomic phosphorus was found to be one of the major products in all systems, and its density increased monotonically with wire temperature but showed saturation at high temperatures. A wire material dependence of density was observed for molecular phosphorus, suggesting that the decomposition of the compound is catalytic. Electron probe microanalyzer (EPMA) measurement showed that the wires are not phosphorized when heated in the presence of phosphine or molecular phosphorus.

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Section: Discussionmentioning

confidence: 74%

Catalytic decomposition of phosphorus compounds to produce phosphorus atoms

Umemoto

Kanemitsu

Kuroda

2014

Jpn. J. Appl. Phys.

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“…W, one of the most widely used wire materials, can easily be carburized when exposed to organic material gases [1][2][3][4][5]. Silicidation is a problem when we use SiH 4 or organosilicon compounds, although the silicidation by SiH 4 is rather minor at high temperatures, i.e., over 1.810 3 K [3][4][5][6][7][8][9][10][11]. Metal contamination is another problem.…”

Section: Introductionmentioning

confidence: 99%

Hot metal wires as sinks and sources of B atoms

Umemoto

Miyata

2017

Thin Solid Films

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Metal wires, such as W, Mo, and Ta, can be boronized to become sinks of B atoms by heating them in the presence of a mixture of H 2 and H 3 NBH 3 or (BH) 3 (NH) 3. These boronized wires behave as sources of B atoms when heated in vacuum. The density of B atoms released to the gas phase increases with the addition of H 2 and can be more than 10 11 cm-3 , which is enough for surface doping. The release is stable and continues for more than several hours when boronized for 1 h. Since the metal wires are not nitrided, contamination by N atoms is not expected. H 3 NBH 3 and (BH) 3 (NH) 3 are not explosive, and wires boronized by these species can be used as safe and contamination-free sources of B atoms for surface doping.

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“…Despite the efforts to reduce filament aging, the filament alloying process is still being investigated. Previous studies have focused primarily on linking microscopy, X-ray diffraction (XRD), elemental energy-dispersive X-ray spectroscopy (EDS), Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), and in situ resistance to characterize the filament carburizing process at low deposition pressures (Kromka et al, 2001; Zeiler et al, 2002; Oliphant et al, 2009 b ; Shi et al, 2011; Tabata & Niato, 2011).…”

Section: Introductionmentioning

confidence: 99%

“…using HWCVD~Dillon et al, 2003!. Despite the efforts to reduce filament aging, the filament alloying process is still being investigated. Previous studies have focused primarily on linking microscopy, X-ray diffraction~XRD!, elemental energy-dispersive X-ray spec-troscopy~EDS!, Auger electron spectroscopy~AES!, X-ray photoelectron spectroscopy~XPS!, and in situ resistance to characterize the filament carburizing process at low deposition pressures~Kromka et al, 2001;Zeiler et al, 2002;Oliphant et al, 2009b;Shi et al, 2011;Tabata & Niato, 2011!. In this contribution, we present the application of electron backscatter diffraction~EBSD! analysis to investigate the W-filament carburization process during the HWCVD of high-quality MWCNTs at high-deposition pressures and CH 4 flow rates~Arendse et al, 2007!.…”

Section: Introductionmentioning

confidence: 99%

EBSD Analysis of Tungsten-Filament Carburization During the Hot-Wire CVD of Multi-Walled Carbon Nanotubes

et al. 2014

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Filament condition during hot-wire chemical vapor deposition conditions of multi-walled carbon nanotubes is a major concern for a stable deposition process. We report on the novel application of electron backscatter diffraction to characterize the carburization of tungsten filaments. During the synthesis, the W-filaments transform to W2C and WC. W-carbide growth followed a parabolic behavior corresponding to the diffusion of C as the rate-determining step. The grain size of W, W2C, and WC increases with longer exposure time and increasing filament temperature. The grain size of the recrystallizing W-core and W2C phase grows from the perimeter inwardly and this phenomenon is enhanced at filament temperatures in excess of 1,400°C. Cracks appear at filament temperatures >1,600°C, accompanied by a reduction in the filament operational lifetime. The increase of the W2C and recrystallized W-core grain size from the perimeter inwardly is ascribed to a thermal gradient within the filament, which in turn influences the hardness measurements and crack formation.

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Silicidation and carburization of the tungsten filament in HWCVD with silacyclobutane precursor gases

Cited by 11 publications

References 19 publications

Catalytic decomposition of phosphorus compounds to produce phosphorus atoms

Catalytic decomposition of phosphorus compounds to produce phosphorus atoms

Hot metal wires as sinks and sources of B atoms

EBSD Analysis of Tungsten-Filament Carburization During the Hot-Wire CVD of Multi-Walled Carbon Nanotubes

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